Fabrication of a New Hybrid Coronene/n-Si Structure by Using Spin Coating Technique and its Photoresponse and Admittance Spectroscopy Studies

Akın, Ümmühan; Yüksel, Ömer Faruk; Taşcı, Enis; Tuğluoğlu, Nihat

doi:10.1007/s12633-019-00233-2

Cited by 22 publications

(7 citation statements)

References 38 publications

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“…The responsivity (R) presents the quality level of the conversion of illumination to electric current, and R is given in the following equation: where P and A are the optical power and the diode area, respectively. 47,48 The R values calculated from the Eq. 11 under various illumination intensities at −2 V are given in Table III.…”

Section: Resultsmentioning

confidence: 99%

“…11 under various illumination intensities at −2 V are given in Table III. In addition, the ratio of photocurrent to dark current (I Ph /I dark ) gives the diode sensitivity, 47,48 and all obtained S values are given in Table III.…”

Section: Resultsmentioning

confidence: 99%

“…Linear variation of light intensity vs current is known as one of the important parameters for a device to be used as a photodiode. 47,49,50 The dependence of the photocurrent vs illumination intensity is expressed as: [50][51][52]…”

Section: Resultsmentioning

confidence: 99%

“…The β value was found as 0.33 which reveals bimolecular recombination mechanism. 47,53 The β value is also attributed to the trap levels in the energy band gap. 54…”

Section: Resultsmentioning

confidence: 99%

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Illumination Dependent Electrical and Photovoltaic Properties of Au/n-Type Si Schottky Diode with Anthracene-Based NAMA Interlayer

Eymür

Tuğluoğlu

Apaydın

et al. 2021

ECS J. Solid State Sci. Technol.

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A Schottky diode based on an organic semiconductor 9-[(5-nitropyridin-2-aminoethyl) iminiomethyl]-anthracene (NAMA) was fabricated on n-Si using a spin-coating technique. The current-voltage (I–V) measurements of Au/NAMA/n-Si/In were taken under dark and various illumination levels to investigation of the change in electrical and photoresponse characteristics such as ideality factor, barrier height and series resistance with illumination. Reverse bias saturation current (I 0), ideality factor (n), and barrier height (Φ B ) values were found as 6.43 × 10−8 A, 3.54 and 0.756 eV in dark (low region); and 2.17 × 10−10 A, 1.39 and 0.903 eV under 100 W illumination level (low region). The forward bias semi logarithmic (I–V) characteristics showed two current-transport mechanisms acting in the diode. It has been shown that all electrical parameters are sensitive to illumination. The current-transport mechanisms of the prepared diode was examined by using ln(I F ) vs ln(V F ) and ln(I R )–V R 1/2 plots. Moreover, Au/NAMA/n-Si diode showed good photovoltaic performance that shows that the fabricated diode can be used as a photodiode in optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…The β value was found as 0.33 which reveals bimolecular recombination mechanism. 47,53 The β value is also attributed to the trap levels in the energy band gap. 54…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Illumination Dependent Electrical and Photovoltaic Properties of Au/n-Type Si Schottky Diode with Anthracene-Based NAMA Interlayer

Eymür

Tuğluoğlu

Apaydın

et al. 2021

ECS J. Solid State Sci. Technol.

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“…The interface layer of organic component allows the creation of holes and electrons in electronic devices and augments the reliability and performance of Schottky device 5 Numerous studies have investigated the effect of organic materials on electrical parameters in applications concerning the use of Schottky devices by means of capacitance-conductancevoltage (C G V --) measurements. [11][12][13][14][15] Akin et al 11 prepared Al/ Coronene/n-Si Schottky barrier diode by spin coating method whereupon the diode was characterized by capacitance-conductance-voltage measurements to understand the electrical properties. Alptekin and Altindal 12 fabricated a Au/PVP/n-Si Schottky diode structure and obtained the values of interface state density, series resistance, and Schottky barrier height from C G V -characteristics in different frequencies.…”

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confidence: 99%

Investigation of Trap States, Series Resistance and Diode Parameters in Al/Gelatin/n-Si Schottky Diode by Voltage and Frequency Dependent Capacitance and Conductance Analysis

Çavdar

Demirölmez

Turan

et al. 2022

ECS J. Solid State Sci. Technol.

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Inorganic-organic Schottky contacts based on Gelatin on n-Si wafer have been prepared by a spin coating technique. The reverse and forward bias capacitance-voltage and conductance-voltage properties of the Al/Gelatin/n-Si Schottky diode at room temperature in the frequency range from 30 kHz to 1 MHz have been explored by the series resistance and interface states effects into account. The conductance and Hill-Coleman method were used to determine interfacial layer capacitance, the "R" _"s" and D_it. Result of experiments approved that the "R" _"s" and "D" _"it" are considerable parameters which severely impact the basic electrical parameters of Al/Gelatin/n-Si Schottky diode. Both the measured capacitance and conductance were corrected to obtain the real diode capacitance ("C" _"c" ) and conductance ("G" _"c" ). Schottky diode parameters such as barrier height ("Φ" _"B" ), ionized donor density ("N" _"D" ), Fermi level ("E" _"F" ), built-in voltage were extracted from frequency-dependent "C" _"c" "-V" and "1" ⁄("C" _"c" ^"2" ) "-V" relations.The "R" _"s" and "D" _"it" values decrease, while the "Φ" _"B" values increase as the frequency increases. Results reveal that the fabricated diode can be used as an powerful material for electronic applications

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Investigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayer

Tezcan

Eymür

Taşcı

et al. 2021

J Mater Sci: Mater Electron

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4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) based BOD-Z-EN compound was used as an interfacial organic layer to fabrication of Au/BOD-Z-EN/n-Si/In diode. The electrical parameters of Au/BOD-Z-EN/n-Si/In diode such as ideality factor (n), barrier height (ΦB) and series resistance (Rs) have been investigated through current-voltage (I-V) studies at dark and under various illumination intensities to understand the effect of interlayer on the device properties. The values found for the n varied from 2.33 to 1.55 and the ΦB ranged from 0.86 eV to 0.90 eV as the illumination condition changed from dark to 100 mW/cm 2 . Series resistance (Rs) values calculated using Cheung's method were found to decrease with increasing illumination level. The forward bias I-V characteristics of the diode were explained by the space charge limited current (SCLC) theory. The main photovoltaic parameters such as open circuit voltage (Voc), short circuit current (Jsc) and fill factor (FF) were determined for various light intensity. The Au/BOD-Z-EN/n-Si/In diode exhibits a photovoltaic behavior with a Voc of 0.15 V and Jsc of 0.01 mA/cm 2 under 100 mw/cm 2 . Also, photosensitivity and photoresponsivity properties of the diode were determined. These all results indicate that Au/BOD-Z-EN/n-Si/In device can be used as photosensor in optoelectronic applications.

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Fabrication of a New Hybrid Coronene/n-Si Structure by Using Spin Coating Technique and its Photoresponse and Admittance Spectroscopy Studies

Cited by 22 publications

References 38 publications

Illumination Dependent Electrical and Photovoltaic Properties of Au/n-Type Si Schottky Diode with Anthracene-Based NAMA Interlayer

Illumination Dependent Electrical and Photovoltaic Properties of Au/n-Type Si Schottky Diode with Anthracene-Based NAMA Interlayer

Investigation of Trap States, Series Resistance and Diode Parameters in Al/Gelatin/n-Si Schottky Diode by Voltage and Frequency Dependent Capacitance and Conductance Analysis

Investigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayer

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