Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

Хабибуллин, Р. А.; Shchavruk, N. V.; Pavlov, Alexey N.; Пономарев, Д. С.; Tomosh, K. N.; Galiev, R. R.; Maltsev, P. P.; Zhukov, A. E.; Cirlin, G. É.; Zubov, F. I.; Alfërov, Zh. I.

doi:10.1134/s1063782616100134

Cited by 23 publications

(5 citation statements)

References 14 publications

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“…The Fabry−Perot resonator was formed by cleaving off laser strips 100 µm wide and 1 to 2 mm long. The preparing method is described in detail in [11,12].…”

Section: Experimental Samples and Measurement Proceduresmentioning

confidence: 99%

Temperature degradation of 2.3, 3.2 and 4.1 THz quantum cascade lasers

et al. 2022

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In this work, we conduct research of spectral and power characteristics of quantum cascade lasers (QCLs) based on a GaAs/Al0.15Ga0.85As active region emitting at 2.3 (A), 3.2 (B) and 4.1 (C) THz. The QCL devices had a double-metal Au waveguide and operated in pulsed mode with 1.5-9 μs pulses at 20 Hz repetition rate. Using the integral output power curves measured with different pulse durations, we consider the potential mechanisms of QCL temperature degradation using Arrhenius plots. Moreover, we present the spectra of the lasers measured at fixed operating points for devices A, C and with current scanning for device B in a wide temperature range from 5 to 120 K. We hope that our results will prove useful for research concerning QCL maximum operating temperatures. Keywords: quantum cascade laser, terahertz range, quantum well, molecular beam epitaxy, activation energy, temperature degradation.

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“…The Fabry−Perot resonator was formed by cleaving off laser strips 100 µm wide and 1 to 2 mm long. The preparing method is described in detail in [11,12].…”

Section: Experimental Samples and Measurement Proceduresmentioning

confidence: 99%

Temperature degradation of 2.3, 3.2 and 4.1 THz quantum cascade lasers

et al. 2022

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“…For fabrication of THz QCL with Au-Au double metal waveguide we used the conventional processing described in Refs. [7] and [8]. The fabricated ridge structures with a 1.6 and 2.6 mm cavity length and a 100 m cavity width were mounted onto copper C-mounts.…”

Section: Fabrication Of Thz Qcl and Measurement Proceduresmentioning

confidence: 99%

The operation of THz quantum cascade laser in the region of negative differential resistance

Хабибуллин¹,

Shchavruk²,

Пономарев³

et al. 2019

Opto-Electronics Review

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We investigate the light-current-voltage characteristics and emission spectra of 2.3 THz quantum cascade laser operating in the negative differential resistance (NDR) region. It was shown that the formation of electric field domains (EFDs) leads to a large number of discontinuities on the current-voltage and the total optical power on current characteristics. Measurements of emission spectra at different current (before the NDR region and in the NDR region) shows that the formation of EFDs results in decrease of the output intensity, but does not influence on Fabry-Perot multi-mode structure of THz QCL. The developed theoretical model predicts the formation of EFDs in the NDR region and qualitatively explain the experimental results.

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“…We have developed post-growth processing of multilayer heterostructures GaAs/AlGaAs THz QCL with double metal waveguide. 10,11 The post-growth processing includes In−Au bonding of the QCL on n+-GaAs wafer, mechanical lapping and selective wet etching of the wafer, and dry etching of the ridge structures using 50-μm-wide and 100-μm-wide Ti/Au contacts as self-aligned etch masks. The inductively coupled plasma reactive ion etching regime has been optimized in BCl 3 /Ar for vertical sidewalls of the ridge structure with the minimum of Ti/Au mask destruction.…”

Section: -4mentioning

confidence: 99%

Terahertz Quantum-Cascade Laser Based on the Resonant-Phonon Depopulation Scheme

Хабибуллин

Shchavruk

Pavlov

et al. 2017

Fundamental and Applied Problems of Terahertz Devices and Technologies

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We have designed GaAs/Al 0.15 Ga 0.85 As multilayer heterostructure (MH) with diagonal transitions and optimized oscillator strength -0.425. We investigate the dependence of the MH energy band profile on the electric field and thermal properties of terahertz quantum cascade lasers (THz QCL) under different operation conditions. Furthermore, we develop a technique for the fabrication of THz QCL with double metal waveguide via low-temperature In-Au wafer bonding followed by substrate removal. Inductively coupled plasma reactive ion etching in BCl 3 /Ar at 15:15 sccm has been used to obtain ridge structure of various widths with vertical sidewalls.

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Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

Cited by 23 publications

References 14 publications

Temperature degradation of 2.3, 3.2 and 4.1 THz quantum cascade lasers

Temperature degradation of 2.3, 3.2 and 4.1 THz quantum cascade lasers

The operation of THz quantum cascade laser in the region of negative differential resistance

Terahertz Quantum-Cascade Laser Based on the Resonant-Phonon Depopulation Scheme

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