Fabrication of a transparent p–n junction using CuBr_1-x I _x and ZnO nanorods

Abstract

A transparent fine structure of p–n junctions using zinc oxide nanorods with different aspect ratios and CuBr1-xIx was prepared by the solution coating method. The structures and electrical properties of the p–n junctions were characterized by scanning electron microscope, X-ray diffraction and current–voltage measurements. Clear rectification characteristics were obtained from all the samples. The leak current in the reverse direction was small in the p–n junction with large diameter nanorods. In the p–n junction with short nanorods, the rise of forward current was steep and a large current flowed. Carrier generation by UV light irradiation was confirmed from all p–n junctions.

Fabrication of ZnO/CuBr1-x I x microstructural transparent solar cells with buffer layer

“…This is in contrast with the results of our previous study, wherein power generation characteristics were not observed for the ZnO NRs/CuBrI p-n junction. 27) As shown in Fig. 8(a), the introduction of BLs increased the open circuit voltage (V OC ) of the TSCs by more than ten times.…”

“…In a previous study on these TSCs, power generation was not achieved although rectification characteristics due to p-n junctions were observed. 27) In this study, power-generatable n-ZnO/p-CuBrI microstructural TSCs with high transmittance and an absorption edge wavelength around 380-420 nm were fabricated. Buffer layers (BLs), which are used in Cu(In,Ga)Se 2 solar cells for reducing recombination near the p-n junction interface, 28,29) were introduced between n-ZnO and p-CuBrI to improve the power conversion efficiency.…”

Remote Monitoring of Energy Production and Efficiency Of an Off-Gridd Photovoltaic System

“…The parameters used to characterize the output of solar cells are the short circuit current (Isc) -current with zero voltage and the open circuit voltage (Voc) -maximum voltage with zero current (Mori et al, 2020). This value increases logarithmically with increased sunlight.…”

Dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ alloy thin films

“…The effective hole mass of CuBr is considered to be very similar to the one of CuI, and therefore the mobility of positive charge carriers in CuBr x I 1x alloys can be reduced by the alloy disorder 42,43 . Also CuBr x I 1x thin film were successfully applied to build transparent p-n-junctions 44 , solar cells 45,46 and thin film transistors 20 . In contrast of the binary compounds, CuI 25,[47][48][49][50] and CuBr [51][52][53] , only few theoretical and experimental results are reported in literature for CuBr x I 1x alloys 22,39,43,54,55 .…”