Fabrication of an electro-absorption transceiver with a monolithically integrated optical amplifier for fiber transmission of 40–60 GHz radio signals

Zhang, Andy Zhenzhong; Wang, Qin; Karlsson, Stig; Kjebon, O.; Schatz, Richard; Fonjallaz, P.-Y.; Almqvist, Susanne; Chacinski, M.; Thylén, Lars; Berggren, Jesper; Hammar, Mattias; Honecker, Joerg; Steffan, Andreas G.

doi:10.1088/0268-1242/26/1/014042

Cited by 5 publications

(4 citation statements)

References 10 publications

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“…The laser MQW structure was first grown, and then EAM MQWs were monolithically integrated by a butt-joint approach utilizing regrowth technique. The DFB TW-EAMs as shown in Figure 3 (c) were designed and fabricated using the wafer-scale micro-fabrication processing, and some related details has been presented in one of our former publications [12].…”

Section: Tw-eam Enabled Mm-wave Transmitter and Transceivermentioning

confidence: 99%

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Recent developments in electroabsorption modulators at Acreo Swedish ICT

Wang¹,

Zhang²,

Almqvist³

et al. 2015

SPIE Proceedings

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Three types of electroabsorption modulators (EAMs) based on III-V semiconductor multiple quantum wells (MQW) are presented in this work. One is a novel monolithic integration traveling-wave EAM for an analog optical transmitter/transceiver to achieve integrated photonic mm-wave functions for broadband connectivity. Another one is composed of an integrated EAM 1D array in a photonic beam-former as a Ku-band phased array antenna for seamless aeronautical networking through integration of data links, radios, and antennas. The third one addresses the use of MQW EAMs in free space optical links through biological tissue for transcutaneous communication.

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Section: Tw-eam Enabled Mm-wave Transmitter and Transceivermentioning

confidence: 99%

“…The SOA and the EAM sections are based on different InGaAsP MQW active layers also connected by the butt joint. A resonant design of the transmission line electrodes for the EAM was used to achieve low link loss for RF signals in the 40-60 GHz range[12].…”

mentioning

confidence: 99%

Recent developments in electroabsorption modulators at Acreo Swedish ICT

Wang¹,

Zhang²,

Almqvist³

et al. 2015

SPIE Proceedings

Self Cite

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“…There are many reports that organic materials have a very poor interfacial fracture resistance (adhesion) to gold. [11][12][13][14] However, the adhesion between BCB and inorganic materials, such as SiO 2 and SiN x is good. 15) Thus, the insertion of a layer of inorganic materials between gold and BCB can improve the adhesion.…”

Section: Improvement Of Bcb Adhesion On Cr/au Metal Layer For Rf Packmentioning

confidence: 99%

System-on-Package Platform with Thick Benzocyclobutene Layer for Millimeter-Wave Antenna Application

Jeon

Kim

Min

et al. 2012

Jpn. J. Appl. Phys.

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Integrated antennas operating at millimeter-wave (mm-wave) frequency have been implemented on a benzocyclobutene (BCB)-based system-onpackage (SOP) substrate. A novel BCB-based SOP substrate with a Si bump and a Si cavity was proposed to increase the BCB thickness, thus enhancing the gain of the microstrip patch array antenna and reducing the transfer loss of the transmission line. The mechanical issues of adhesion and stress of BCB are studied. The adhesion between gold and BCB was improved significantly by the insertion of a layer of Si oxide (SiO 2 ) by plasma-enhanced chemical vapor deposition (PECVD). SiO 2 can also reduce the wafer bow by stress compensation. Wafer bow of whole structure was decreased from 79.3 to 55.2 m by the insertion of a 1-m-thick SiO 2 layer. A series-fed 1 Â 8 linear array antenna is impedance matched well at 77 GHz. The process flow including BCB chemical mechanical polishing (CMP) was described. The proposed SOP substrate can be a candidate for overcoming the constraint of BCB thickness. #

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“…In particular, the commercial dielectric polymer, i.e., DVS-BCB, has attracted significant attention, owing to its excellent properties, such as low dielectric constant (~2.65 for the frequency range of 10 Hz to 1 MHz), low moisture absorption, low cure temperature, high degree of planarization, low level of ionic contaminants, high optical clarity, good thermal stability, excellent chemical resistance, and good compatibility with various metallization systems [10][11][12][13][14]. Therefore, DVS-BCB is used in bonding and packaging processes for three-dimensional (3D) integrated circuit [4,15], optical [16,17], and MEMS devices [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

High-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process

et al. 2021

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Divinylsiloxane-bis-benzocyclobutene (DVS-BCB) has attracted significant attention as an intermediate bonding material, owing to its excellent properties. However, its applications are limited, due to damage to peripheral devices at high curing temperatures and unoptimized compressive pressure. Therefore, it is necessary to explore the compressive pressure condition for DVS-BCB bonding. This study demonstrates an optimization process for void-free DVS-BCB bonding. The process for obtaining void-free DVS-BCB bonding is a vacuum condition of 0.03 Torr, compressive pressure of 0.6 N/mm2, and curing temperature of 250 °C for 1 h. Herein, we define two factors affecting the DVS-BCB bonding quality through the DVS-BCB bonding mechanism. For strong DVS-BCB bonding, void-free and high-density chemical bonds are required. Therefore, we observed the DVS-BCB bonding under various compressive pressure conditions at a relatively low temperature (250 °C). The presence of voids and high-density crosslinking density was examined through near-infrared confocal laser microscopy and Fourier-transform infrared microscopy. We also evaluated the adhesion of the DVS-BCB bonding, using a universal testing machine. The results suggest that the good adhesion with no voids and high crosslinking density was obtained at the compressive pressure condition of 0.6 N/mm2. We believe that the proposed process will be of great significance for applications in semiconductor and device packaging technologies.

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Fabrication of an electro-absorption transceiver with a monolithically integrated optical amplifier for fiber transmission of 40–60 GHz radio signals

Cited by 5 publications

References 10 publications

Recent developments in electroabsorption modulators at Acreo Swedish ICT

Recent developments in electroabsorption modulators at Acreo Swedish ICT

System-on-Package Platform with Thick Benzocyclobutene Layer for Millimeter-Wave Antenna Application

High-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process

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