Fabrication of buried channel waveguides on silicon substrates using spin-on glass

Holmes, Andrew S.; Syms, R.R.A.; Li, Ming; Green, Mino

doi:10.1364/ao.32.004916

Cited by 75 publications

(55 citation statements)

References 20 publications

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“…Next, the Yb-doped silica solgel is deposited in three layers onto a silicon substrate by spin coating. Immediately after each layer deposition, the thin film is annealed at 1,000°C in normal atmosphere for 3 h to remove the solvent, undesired organics, and hydroxyl groups in the solgel network [11,12]. Afterwards, the glass film is patterned by standard lithography and isolated silica disks are defined on the silicon substrate using a buffered oxide wet etch.…”

mentioning

confidence: 99%

Ultralow-threshold Yb^3+:SiO_2 glass laser fabricated by the solgel process

2007

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A Yb-doped silica microcavity laser on a silicon chip is fabricated from a solgel thin film. The high-Q microtoroid cavity, which has a finesse of 10,000, is evanescently coupled to an optical fiber taper. We report a threshold of 1.8 W absorbed power that is, to the best of our knowledge, the lowest published threshold to date for any Yb-doped laser. . In addition, the rare-earth aggregate emission spectrum spans many key wavelengths from 0.3 to 3 m that are important for imaging, sensing, medical treatment, and communications. While rareearth lasers have been built in large form factors for high-power laser cutting and defense applications, they can also be designed to be small, low power, and ultrasensitive to the environment. The laser resonator finesse, defined as the free spectral range (FSR) divided by the resonance linewidth, quantifies the loss and hence energy storage efficiency of a resonator. For a given cavity, higher finesse results in lower threshold for lasing. Lacovara et al. measured a 71 mW threshold for a Yb 3+

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confidence: 99%

Ultralow-threshold Yb^3+:SiO_2 glass laser fabricated by the solgel process

2007

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“…Further heat treatment is then needed to drive off remaining solvent, to remove residual organic groups, and to collapse the pores. A high degree of shrinkage is involved, and the resulting stress usually limits maximum film thickness; however, cracking can be prevented by an iterative process in which a number of thin layers are deposited and annealed [10]. Based on this approach, buried channel waveguides have been developed with low loss, and passive components such as splitters have been demonstrated [11].…”

Section: Formats For Edwasmentioning

confidence: 99%

Molecular homogeneity in erbium-doped sol-gel waveguide amplifiers

Laliotis

Yeatman

Ahmad

et al. 2004

IEEE J. Quantum Electron.

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Abstract-High net gain levels have recently been reported in silica-on-silicon waveguide amplifiers, using the sol-gel method of glass deposition. Spectroscopic measurements indicate that high inversion levels are achieved at high erbium concentrations, suggesting a high uniformity in the erbium distribution. Here we show that high inversion and low scattering losses are only achieved in sol-gel waveguides which have had restricted heat treatment and that both degrade upon additional annealing. Evolution of scattering loss spectra are presented, and these are included in a model of the ytterbium-sensitized waveguide amplifiers to show that the gain reduction with heat treatment is not wholly due to pump and signal excess losses, but also to changes in the spectroscopic properties of the erbium ions. In particular, the formation of clusters in which inversion is rapidly quenched is indicated. Thus, we show that the superior performance of the sol-gel method for rare-earth doping of silica waveguides, for amplifier and laser applications, results from its ability to form homogenous molecular structures which are meta-stable and which consequently cannot be formed in glasses that require high-temperature consolidation or annealing.

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“…These layers may then be formed into buried channel guides by reactive ion etching and burial [60], [61]. An alternative strip-loaded geometry with higher coupling and propagation loss has also been developed [62].…”

Section: Sol-gel Silica-on-siliconmentioning

confidence: 99%

“…Both these systems were based on TiO -SiO . However, TiO is relatively unsuitable, because of its high process temperatures [60] and tendency to form crystalline rutile or anatase phases [63].…”

Section: Sol-gel Silica-on-siliconmentioning

confidence: 99%

Sol-gel silica-on-silicon buried-channel EDWAs

Huang

Syms

2003

J. Lightwave Technol.

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Abstract-Silica-on-silicon erbium-doped waveguide amplifiers (EDWAs) fabricated by the sol-gel route are demonstrated. The preparation of stable sols is first described, with emphasis on identifying chemical routes that allow the incorporation of sufficient concentration of erbium without precipitation or gelation. Erbium-doped glasses containing various codopants, such as phosphorus, aluminum, germanium and ytterbium are formed and used in the construction of buried channel guide EDWAs. A range of optical measurements is presented, and the effects of the dopants in eliminating erbium ion quenching and improving pumping efficiency are evaluated. The best material system-Er/Yb codoped aluminophosphosilicate glass-has low background loss and a net gain of 1.1 dB/cm.

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Fabrication of buried channel waveguides on silicon substrates using spin-on glass

Cited by 75 publications

References 20 publications

Ultralow-threshold Yb^3+:SiO_2 glass laser fabricated by the solgel process

Ultralow-threshold Yb^3+:SiO_2 glass laser fabricated by the solgel process

Molecular homogeneity in erbium-doped sol-gel waveguide amplifiers

Sol-gel silica-on-silicon buried-channel EDWAs

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