Fabrication of carbon nanoflakes by RF sputtering for field emission applications

Shih, Wen–Ching; Jeng, Jian-Min; Huang, Chih‐Yu; Lo, Jyi-Tsong

doi:10.1016/j.vacuum.2010.01.049

Cited by 44 publications

(14 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, electrical, structural and optical properties of VGNs can be tuned by controlling the vertical sheet density, structural imperfections and the chemical nature of edge states [ 9 – 11 ]. Shih et al [ 12 ] have reported the importance of optimized growth for better field-emission properties of VGNs. The culturing rate of cancer cervical cells was found to strongly depend on the density of VGNs by Watanabe and co-workers [ 13 ].…”

Section: Introductionmentioning

confidence: 99%

Process-specific mechanisms of vertically oriented graphene growth in plasmas

Ghosh¹,

Polaki²,

Kumar³

et al. 2017

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

Applications of plasma-produced vertically oriented graphene nanosheets (VGNs) rely on their unique structure and morphology, which can be tuned by the process parameters to understand the growth mechanism. Here, we report on the effect of the key process parameters such as deposition temperature, discharge power and distance from plasma source to substrate on the catalyst-free growth of VGNs in microwave plasmas. A direct evidence for the initiation of vertical growth through nanoscale graphitic islands is obtained from the temperature-dependent growth rates where the activation energy is found to be as low as 0.57 eV. It is shown that the growth rate and the structural quality of the films could be enhanced by (a) increasing the substrate temperature, (b) decreasing the distance between the microwave plasma source and the substrate, and (c) increasing the discharge power. The correlation between the wetting characteristics, morphology and structural quality is established. It is also demonstrated that morphology, crystallinity, wettability and sheet resistance of the VGNs can be varied while maintaining the same sp3 content in the film. The effects of the substrate temperature and the electric field in vertical alignment of the graphene sheets are reported. These findings help to develop and optimize the process conditions to produce VGNs tailored for applications including sensing, field emission, catalysis and energy storage.

show abstract

Section: Introductionmentioning

confidence: 99%

Process-specific mechanisms of vertically oriented graphene growth in plasmas

Ghosh¹,

Polaki²,

Kumar³

et al. 2017

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

show abstract

“…6 CNWs can be grown on diverse substrates through various chemical vapor deposition (CVD) methods, [7][8][9] and can even be grown via sputtering. 10 CNWs with a wide reaction area can be used in many applications. Having a large reaction area, however, does not mean having high surface energy.…”

Section: Introductionmentioning

confidence: 99%

Analysis of plasma-grown carbon oxide and reduced-carbon-oxide nanowalls

et al. 2020

View full text Add to dashboard Cite

show abstract

“…These factors enable compatibility of the deposition method with a wide variety of substrates and make sputtering a technology of choice for various thin film applications. Nevertheless, few studies on nanostructured carbon materials obtained using magnetron sputtering [17][18][19] and even fewer for graphene synthesis 20 have been reported so far. To the best of our knowledge, studies of graphenes synthesized using magnetron sputtering on silicon and metallic foils have not been reported.…”

Section: Introductionmentioning

confidence: 99%

Multilayer graphene synthesized using magnetron sputtering for planar supercapacitor application

2015

View full text Add to dashboard Cite

This study reports the direct preparation of graphene-based films using magnetron sputtering of graphite target. The nanomaterial was deposited at a low temperature of 620 °C on silicon wafers and on metallic foils including aluminum. The films were used in fabrication of supercapacitors with a planar geometry. Electrochemical characterizations demonstrated that the films produced showed nearly ideal electrical capacitive behavior. The maximum capacitance obtained from cyclic voltammetry analysis was 325 F/g for a scan rate of 1 mV/s. The device is capable of delivering an energy density of 13.9 Wh/kg at a very high power density of 50 000 W/kg for ultrafast scan rate of 1000 mV/s. The graphene nanomaterial electrode retains the electrochemical stability over a large number of charge-discharge cycles.

show abstract

Fabrication of carbon nanoflakes by RF sputtering for field emission applications

Cited by 44 publications

References 27 publications

Process-specific mechanisms of vertically oriented graphene growth in plasmas

Process-specific mechanisms of vertically oriented graphene growth in plasmas

Analysis of plasma-grown carbon oxide and reduced-carbon-oxide nanowalls

Multilayer graphene synthesized using magnetron sputtering for planar supercapacitor application

Contact Info

Product

Resources

About