Fabrication of CuIn1−xGaxSe2 thin film solar cells by sputtering and selenization process

A study on composition, structure and optical properties of copper-poor CIGS thin film deposited by sequential sputtering of CuGa/In and In/(CuGa+In) precursors

“…However, in spite of the high efficiency of 16.2% achieved by sputtering/selenization process [8], the formation mechanism of even relatively simple Cu-In-Ga-Se compound during the sputtering and selenization process is not yet completely understood. To obtain composition uniformity of the CIGS layer, stacked metal of In/CuGa, CuGa/In/CuGa, In/CuGa/In precursors have been investigated to avoid the formation of low temperature Ga-In eutectic alloy with liquid feature [10][11][12][13][14]. Hsu et al reported, a single CuInGa precursor layer sandwiched between a thin CuGa and an In layers precursor structure for improving the open circuit voltage (V oc ) and short current density (J sc ) of a CIGS solar cell [14].…”

Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors

“…Song et al . 16 used the 2-step selenization of a sputtered CuGaIn precursor, consisting of 10 min at 350 °C (1 st step) and 1–3 h at 550–650 °C (2 nd step) under Se vapor. They reported that this 2-step selenization resulted in the formation of liquid In-Se compounds and thus yielded a smoother surface morphology and a single phase of chalcopyrite.…”

Growth Conditions and Structural Properties of Cu(In,Ga)Se2 Thin Films Prepared by Selenization Method Using Diethylselenide

“…With the LT selenization, however, the roughness of the former is higher than that of the latter. Thus, the rough surface and the hillocks on the surface seem to be mainly due to the melting of the In metal of the bilayer precursor at the early stage of the selenization, 10,11) and this effect was smaller for the LT selenization than for the HT selenization. Figure 4 shows the diffraction angle 2 of the CIGS (220)/(204) XRD line of a chalcopyrite phase plotted as a function of the selenization temperature for the CIGS film selenized using the bilayer precursor.…”