Globalization pressured a rebirth of the state in Korea, but in an unexpected direction. Whereas the welfare state retrenched in Western Europe under pressures of the borderless global economy, the Korean state reinvented itself into the guardian of public welfare. That regime shift occurred when the “Asian crisis” struck in 1997 to end the developmental state's way of growth. Previously, the state channeled subsidized bank loans to the chaebol firms (monopolistic conglomerates in strategic industries) and the chaebol company welfare to its workforce in order to secure industrial peace in strategic growth sectors. This de facto class bargain, partly forced by the developmental state and chaebol firms and partly prodded by organized labor, crumbled with the Asian crisis. No longer too big to fail, the chaebol firms plunged into downsizing and restructuring in order to raise profitability, thus precipitating a profound social crisis. The rules and norms of lifetime employment and promotion by seniority gestated during Park Chung Hee's authoritarian rule (1961–1979), and labor's acquiescence—if not consent—to the chaebol-led hypergrowth strategy collapsed as the crisis damaged a third of Korea's top thirty business conglomerates in 1997 and 1998.

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The authors attempted to grow a semi-insulating silicon carbide (SiC) epitaxial layer by in situ iron doping. The homoepitaxial growth of the iron-doped 4H-SiC layer was performed by metal-organic chemical vapor deposition using the organo-silicon precursor bis(trimethylsilylmethane) (C7H20Si2) and the metal-organic precursor t-butylferrocene (C14H17Fe). For the measurement of the resistivity of the iron-doped 4H-SiC epilayers, the authors used the on resistance of Schottky barrier diode. Based on the measurement of the on resistance, it is shown that the free carrier concentration was decreased with increasing partial pressure of t-butylferrocene. The resistivity of the iron-doped 4H-SiC epilayer was about 108Ωcm.

The authors attempted to grow a semi-insulating 4H-SiC epitaxial layer by in situ vanadium doping. The homoepitaxial growth of the vanadium-doped 4H-SiC layer was performed by metallorganic chemical vapor deposition using the organosilicon precursor bis-trimethylsilylmethane (BTMSM, normalC7normalH20Si2 ) and the metallorganic precursor bis-cyclopentadienylvanadium (Verrocene, normalC10normalH10V ). The vanadium doping effect on the crystallinity of the epi layer was very destructive. Vanadium-doped epi layers grown under normal conditions had various crystal defects such as micropipes and polytype inclusions, but this crystallinity degradation was overcome by elevating the growth temperature. For measurement of the resistivity of the highly resistive vanadium-doped 4H-SiC epi layers, the authors used the on-resistance technique. Based on the measurements of the on-resistance of the Schottky barrier diode fabricated using the vanadium-doped epi layers, it was revealed that the residual donor concentration of the epi layers was decreased with increasing partial pressure of verrocene. The resistivity of the in situ vanadium-doped 4H-SiC epi layer was about 107–1012Ωcm .

The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC were examined using metal-insulator-semiconductor (MIS) structures of Pt/La2O3(18nm)/4H-SiC and Pt/Al2O3(10nm)/La2O3(5nm)/4H-SiC. For the Pt/La2O3(18nm)/4H-SiC structure, even though the leakage current density was slightly reduced after the rapid thermal annealing at 500 oC, accumulation capacitance was gradually increased with increasing bias voltage due to a high leakage current. On the other hand, since the leakage current in the accumulation regime was decreased for the Pt/Al2O3/La2O3/4H-SiC MIS structure owing to the capped Al2O3 layer, the capacitance was saturated. But the saturation capacitance was strongly dependent on frequency, indicating a leaky interfacial layer formed between the La2O3 and SiC during the fabrication process of Pt/Al2O3(10nm)/ La2O3(5nm)/ 4H-SiC structure.