Fabrication of Electroless NiReP Barrier Layer on SiO[sub 2] Without Sputtered Seed Layer

Osaka, Tetsuya; Takano, Nao; Kurokawa, T.; Ueno, Kazuyoshi

doi:10.1149/1.1421747

Cited by 48 publications

(30 citation statements)

References 12 publications

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“…Various metallic films have been proposed as capping/barrier layers, including NiReP [7], CoWP [8][9][10][11][12][13], CoWB [14], NiWB [15], NiCoP [16], CoMoP [17], and so on. These films were formed by using wet chemical methods such as electroless and electro plating.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of electrodeposited CoWP capping layers using alkali-metal-free precursors

Namkoung

Lee

Son

et al. 2010

Korean J. Chem. Eng.

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CoWP films, used as a capping layer for a copper interconnection, were electrodeposited using alkalimetal-free precursors, and the effect of the electrolyte concentration on the film characteristics such as the thickness, composition, and microstructure was investigated. The current density and the film thickness increased with the concentration of cobalt, tungsten, and phosphorous precursors. When the cobalt ion concentration in the electrolyte was increased from 0.01 to 0.09 M, the cobalt content in the film increased from 67 to 89 at%, while the tungsten and phosphorous contents decreased from 16 to 0.7 and 17 to 10 at%, respectively. The tungsten and phosphorous contents also increased as their corresponding concentrations increased in the electrolyte. Microstructural analyses showed that the tungsten and phosphorous content in the film greatly affected the crystallinity of the CoWP films electrodeposited using alkali-metal-free precursors.

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Section: Introductionmentioning

confidence: 99%

Characteristics of electrodeposited CoWP capping layers using alkali-metal-free precursors

Namkoung

Lee

Son

et al. 2010

Korean J. Chem. Eng.

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“…Figure 15.4a shows the specimen before annealing; the interface of NiP/Cu was clearly observed. After annealing to 300°C, however, it is obvious that [22] interdiffusion occurred in the interfacial region as observed in Fig. 15.4b.…”

Section: Thermal Stability Of Electroless Ni-alloy Filmsmentioning

confidence: 95%

“…The specimens discussed in this section were prepared on a Cu/Ta/SiO 2 /Si substrate. Details of the film composition depending on the bath composition and plating condition are listed in the Table 15.1 [22][23][24]. The sheet resistance of each film varied with annealing temperature, as shown in Fig.…”

Section: Thermal Stability Of Electroless Ni-alloy Filmsmentioning

confidence: 99%

“…This deposit seemed to have been formed on a few catalytic Pd particles, which remained barely attached to the surface. In the formation of NiReP films on the organic molecules-coated SiO 2 substrate, strike plating in the acid NiP bath must be applied before immersion in the NiReP bath [22,23]. The layer of organic molecules is probably degraded by immersing in NiReP solution, because the deposition rate of electroless NiReP is extremely slow.…”

Section: All-wet Barrier-layer Fabrication Process On Sio 2 Substratementioning

confidence: 99%

“…Figure 15.2a shows the schematic illustration of conventional dry damascene process. In this proposal, the capping and barrier layers are fabricated by electroless deposition; in particular, we propose a novel process for fabricating a barrier layer without sputtered seeds by using a layer of organic molecules as an adhesive and catalyst immobilizing layer for the electroless Ni-alloy deposition on SiO 2 [22][23][24][25][26][27][28]. The layer of organic molecules is bonded to the SiO 2 surface by silane-coupling reaction, leading to the formation of a layer.…”

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confidence: 99%

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This overview describes the results of our recent study of the application of electrochemical nanotechnology to the fabrication of magnetic recording materials, interconnects in ultra-large-scale integrated (ULSI) devices, energy storage materials, and on-chip biosensors. It is important to note that electrochemical processes play significant roles in developing and fabrication such sophisticated materials and devices. In the field of magnetic recording, electrodeposition methods for preparing CoNiFe and CoFe soft magnetic thin films with a high saturation magnetic flux density were newly developed, and the significant issues for obtaining those films are highlighted. In the area of ULSI interconnects, we developed a technique using a self-assembled monolayer (SAM) for direct bonding of the interconnect layer to SiO2, and proposed a novel electroless deposition method for fabricating a diffusion barrier layer. In the field of batteries, electrodeposited SnNi alloy was proposed as a future anode material for Li batteries, and electrochemical MEMS processes were shown to be useful for fabricating micro-sized direct methanol fuel cells (DMFCs) as portable batteries for electronics applications. In the area of chemical sensors, we developed a new process for fabricating field effect transistors (FETs) modified with SAMs for on-chip biosensing applications.

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Fabrication of Electroless NiReP Barrier Layer on SiO[sub 2] Without Sputtered Seed Layer

Cited by 48 publications

References 12 publications

Characteristics of electrodeposited CoWP capping layers using alkali-metal-free precursors

Characteristics of electrodeposited CoWP capping layers using alkali-metal-free precursors

Electrochemical Fabrication Process for ULSI Interconnects

Creation of highly functional thin films using electrochemical nanotechnology

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