2016
DOI: 10.1109/lpt.2015.2493583
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Fabrication of Etched Facets and Vertical Couplers in InP for Packaging and On-Wafer Test

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Cited by 6 publications
(7 citation statements)
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“…The etch depth of these structures was chosen to be one of the standard etch levels available in the TU/e-SMART Photonics and OCLARO InP platforms [22], [23], thus not requiring any process adaptations for using the probes. The etching process provided by these platforms allows for high quality facets [20].…”
Section: Inp Counterpartmentioning
confidence: 99%
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“…The etch depth of these structures was chosen to be one of the standard etch levels available in the TU/e-SMART Photonics and OCLARO InP platforms [22], [23], thus not requiring any process adaptations for using the probes. The etching process provided by these platforms allows for high quality facets [20].…”
Section: Inp Counterpartmentioning
confidence: 99%
“…Edge-coupled devices have the advantage of broadband optical response, but access to the waveguide is not available until after the chips have been singulated from the wafer. Since the mode size of a standard single-mode fiber (SMF) and the waveguide may differ significantly (typically a factor [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20], either mode-size converters are required or sub-micron alignment may be needed, or a combination of both. Grating couplers couple out-of-plane to a near-vertical direction and are manufacturable in thin membranetype high-contrast waveguides, typically in Si-based integration technologies.…”
Section: Introductionmentioning
confidence: 99%
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“…However, the methods used have the drawback of process complexity and are not very well suited for large-scale wafer processing. A chemical etching technique was also recently explored for producing the reflective outcoupler in a InP/InGaAsP laser 17 , but the process is crystal facet-limited to produce a 55° angle, which limits the versatility of the technique. In addition, this approach is not easily adapted to the QCL waveguide, which has a more complex waveguide containing InP, GaInAs, and AlInAs.
Figure 1Reflective outcoupler operation and formation.
…”
Section: Introductionmentioning
confidence: 99%
“…For these reasons, a GC is not suited for InP-based broadband devices such as tunable laser diodes. In terms of wavelength/temperatureindependent optical I/O, mirror-based OPCs are superior to diffractionbased ones [6,7]. However, problems with InP-based mirror couplers include batch-to-batch fabrication variation in the mirror angle and larger insertion loss than that of SiPh-based GCs.…”
mentioning
confidence: 99%