Fabrication of Ferroelectric Bi4Ti3O12 Thin Films by Dipping Pyrolysis of Metal Naphthenates and Micropatterns by an Electron Beam

Kakimi, Atsushi; Okamura, Soichiro; Yagi, Yukie; Mori, Katsumi; Tsukamoto, T.

doi:10.1143/jjap.33.5301

Cited by 53 publications

(15 citation statements)

References 10 publications

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“…In the last few years electrical transport on DNAbased polymers has been a topic of intensive research. [19] While natural DNA seems to be a poor electrical conductor, as reported by Gomez-Navarro et al [20] and further confirmed by Storm et al [21] (see reviews on this topic [22] Mercaptopurine is a thiopurine derivative whose structure is closely related to that of oxoderivative guanine, since they differ only in that mercaptopurine has a heteroatom at position 6 and no NH 2 group at position 2 (Fig. 1a).…”

Section: Methodsmentioning

confidence: 64%

Sub‐10 nm High‐Aspect‐Ratio Patterning of ZnO Using an Electron Beam

et al. 2005

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Section: Methodsmentioning

confidence: 64%

Sub‐10 nm High‐Aspect‐Ratio Patterning of ZnO Using an Electron Beam

et al. 2005

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“…The sensitivity is ∼9 mC cm −2 (at half the normalized thickness, D 0.5 ) and the contrast is γ ≈ 1.4. Infrared absorption studies of naphthenate materials by Kakimi et al suggest that electron beam exposure results in the creation of bridges at the CO and/or (CH 2 ) n  sites, thereby causing crosslinking and the negative tone behavior 21. These properties are suitable for the creation of design patterns, with the nickel naphthenate acting as a negative resist.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Sub‐10 nm Metallic Lines of Low Line‐Width Roughness by Hydrogen Reduction of Patterned Metal–Organic Materials

Nedelcu

Saifullah

Hasko

et al. 2010

Adv Funct Materials

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The fabrication of very narrow metal lines by the lift‐off technique, especially below sub‐10 nm, is challenging due to thinner resist requirements in order to achieve the lithographic resolution. At such small length scales, when the grain size becomes comparable with the line‐width, the built‐in stress in the metal film can cause a break to occur at a grain boundary. Moreover, the line‐width roughness (LWR) from the patterned resist can result in deposited metal lines with a very high LWR, leading to an adverse change in device characteristics. Here a new approach that is not based on the lift‐off technique but rather on low temperature hydrogen reduction of electron‐beam patterned metal naphthenates is demonstrated. This not only enables the fabrication of sub‐10 nm metal lines of good integrity, but also of low LWR, below the limit of 3.2 nm discussed in the International Technology Roadmap for Semiconductors. Using this method, sub‐10 nm nickel wires are obtained by reducing patterned nickel naphthenate lines in a hydrogen‐rich atmosphere at 500 °C for 1 h. The LWR (i.e., 3 σLWR) of these nickel nanolines was found to be 2.9 nm. The technique is general and is likely to be suitable for fabrication of nanostructures of most commonly used metals (and their alloys), such as iron, cobalt, nickel, copper, tungsten, molybdenum, and so on, from their respective metal–organic compounds.

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“…This gives rise to negative tone patterning. 10 It is worth noting that there is no lift-off step in our study and consequently problems associated with this step are bypassed; the result of which is less number of processing steps to get highresolution oxide nanolines.…”

Section: Resultsmentioning

confidence: 99%

Sub-10-nm high aspect ratio patterning of ZnO in a 500μm main field

Saifullah

Subramanian

Anderson

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We demonstrate the fabrication of sub-10-nm high aspect ratio electron beam patterning of ZnO at the center as well as corners of the 500μm square main deflection field using a negative tone zinc naphthenate resist. After electron beam exposure, the resist was developed in toluene, resulting in high-resolution patterns as small as 7nm with an aspect ratio of ∼10 in the center as well as at the corners of the main field. The line edge roughness (3σ) of these lines shows roughness with fluctuations of about 2.8nm; thus making it the smallest value of the line edge roughness measured so far for any electron beam resist. Heating the structures at 500°C resulted in reduction of feature sizes to ∼5nm and in the formation of crystalline ZnO. Such sub-10-nm high aspect ratio patterning within the main deflection field is an important step to enable full-wafer-level nanofabrication.

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Fabrication of Ferroelectric Bi₄Ti₃O₁₂ Thin Films by Dipping Pyrolysis of Metal Naphthenates and Micropatterns by an Electron Beam

Cited by 53 publications

References 10 publications

Sub‐10 nm High‐Aspect‐Ratio Patterning of ZnO Using an Electron Beam

Sub‐10 nm High‐Aspect‐Ratio Patterning of ZnO Using an Electron Beam

Fabrication of Sub‐10 nm Metallic Lines of Low Line‐Width Roughness by Hydrogen Reduction of Patterned Metal–Organic Materials

Sub-10-nm high aspect ratio patterning of ZnO in a 500μm main field

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