2018
DOI: 10.1021/acs.inorgchem.8b01221
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Fabrication of Hierarchical Two-Dimensional MoS2 Nanoflowers Decorated upon Cubic CaIn2S4 Microflowers: Facile Approach To Construct Novel Metal-Free p–n Heterojunction Semiconductors with Superior Charge Separation Efficiency

Abstract: Due to the enormous demand for effective conversion of solar energy and large-scale hydrogen production, cost-effective and long-lasting photocatalysts are believed to be necessary for global production of sustainable and clean hydrogen fuel. Robust and highly efficient p-n heterojunction photocatalysts have a striking ability to enhance light-harvesting capacity and retard the recombination of photoexcitons. A series of p-MoS/n-CaInS heterojunction composites with different MoS contents have been synthesized … Show more

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Cited by 125 publications
(101 citation statements)
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“…Compared with the flat band potential of pure BiOBr (‐0.825 eV), the flat band potential of the BiMSbO 6 (M=Ti, Sn)/BiOBr heterojunction exhibited a negative shift, indicating that the Fermi level of the p‐type semiconductor BiMSbO 6 (M=Ti, Sn) moved downward in the BiMSbO 6 (M=Ti, Sn)/BiOBr heterojunction, while the Fermi level of the n‐type semiconductor BiOBr moved upward in the BiMSbO 6 (M=Ti, Sn)/BiOBr heterojunction . Furthermore, the carrier density of the electrode material was inversely proportional to the slope of the Mott‐Schottky plot . The slope of 20 wt% BiTiSbO 6 /BiOBr heterojunction (3.02) or the slope of 10 wt% BiSnSbO 6 /BiOBr heterojunction (3.84) was much smaller than the slope of pure BiOBr (8.66), confirming that the BiMSbO 6 (M=Ti, Sn)/BiOBr heterojunction had a much higher donor density capacity.…”
Section: Resultsmentioning
confidence: 95%
“…Compared with the flat band potential of pure BiOBr (‐0.825 eV), the flat band potential of the BiMSbO 6 (M=Ti, Sn)/BiOBr heterojunction exhibited a negative shift, indicating that the Fermi level of the p‐type semiconductor BiMSbO 6 (M=Ti, Sn) moved downward in the BiMSbO 6 (M=Ti, Sn)/BiOBr heterojunction, while the Fermi level of the n‐type semiconductor BiOBr moved upward in the BiMSbO 6 (M=Ti, Sn)/BiOBr heterojunction . Furthermore, the carrier density of the electrode material was inversely proportional to the slope of the Mott‐Schottky plot . The slope of 20 wt% BiTiSbO 6 /BiOBr heterojunction (3.02) or the slope of 10 wt% BiSnSbO 6 /BiOBr heterojunction (3.84) was much smaller than the slope of pure BiOBr (8.66), confirming that the BiMSbO 6 (M=Ti, Sn)/BiOBr heterojunction had a much higher donor density capacity.…”
Section: Resultsmentioning
confidence: 95%
“…where the values of X for MoS 2 and g-C 3 N 4 are 5.323 and 4.72, respectively, E 0 is the energy of free electrons on the hydrogen scale ($4.5 eV), and E g is the band gap. 32 On the basis of the above equations, the calculated positions of the CB and VB of MoS 2 are À0.097 eV and 1.743 eV, respectively, and the calculated positions of the CB and VB of g-C 3 N 4 are À1.13 eV and 1.57 eV, respectively. Aer doping with oxygen atoms and the formation of a composite with MoS 2 , the absorption edge of O-C 3 N 4 /MoS 2 -5 underwent a red shi, which led to a wider absorption edge that reached about 537 nm.…”
Section: Bet Analysismentioning
confidence: 95%
“…Photocatalysts with 3D structure, such as nanosheets‐assembled flowers, [ 227–233 ] hollow spheres, [ 234–243 ] and hierarchical NW arrays, [ 244–252 ] have been widely developed. Due to their special features, including high specific surface area and high light utilization, they always demonstrate excellent photocatalytic CO 2 reduction performance.…”
Section: Nano‐/microstructure Engineeringmentioning
confidence: 99%