Fabrication of high aspect ratio structures for microchannel plates

Abstract

Charge issues in high oxygen gas ratio tetraethylorthosilicate plasma enhanced chemical vapor deposition films Substrates for microchannel plates have been fabricated using Si micromachining techniques. High aspect ratio pores are constructed using reactive ion etching and streaming electron cyclotron resonance etching, and low-pressure chemical vapor deposition ͑LPCVD͒. In one process, 40 m deep pores with 2 m openings on 4 m centers are directly etched in Si. Alternatively, pores with aspect ratios of 30:1 are constructed in a low-stress SiN x membrane using a sacrificial template process whereby pillars of Si are etched and then subsequently backfilled with a dielectric using LPCVD.

MEMS mass spectrometers: the next wave of miniaturization

“…However, there has been limited progress on multiplying detectors, due to the complex nature of the materials required (which must have a high secondary electron yield, and in continuous channel must also be semiconducting). MCPs have been made by deep etching silicon substrates [160,161] and their emission properties have been improved with CVD diamond [162]. MCPs have also been combined with microelectronics for readout [163][164][165].…”

Amorphous silicon-based microchannel plates

“…An alternative was proposed using crystalline silicon MCPs, where channels can be fabricated using photolithographic and micromachining technologies [3][4][5]. However, additional oxide and semiconducting layers are still needed because of the too high bulk conductivity of c-Si [3,4].…”

“…The fabrication of these plates is cumbersome and costly, and requires the coating of the microchannel walls with a semiconducting material to allow the charge replenishment after the occurrence of an avalanche [1,2]. An alternative was proposed using crystalline silicon MCPs, where channels can be fabricated using photolithographic and micromachining technologies [3][4][5]. However, additional oxide and semiconducting layers are still needed because of the too high bulk conductivity of c-Si [3,4].…”

Silicon microhole array prepared by ICP

“…In 1999, NanoSciences Corporation engaged in micromachining microchannel arrays of silicon and other materials. The fabrication issues for building large format silicon microchannel arrays was investigated [3,4] . Silicon has been used microchannel arrays because of its compatibility to silicon integrated circuits.…”