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Charge issues in high oxygen gas ratio tetraethylorthosilicate plasma enhanced chemical vapor deposition films Substrates for microchannel plates have been fabricated using Si micromachining techniques. High aspect ratio pores are constructed using reactive ion etching and streaming electron cyclotron resonance etching, and low-pressure chemical vapor deposition ͑LPCVD͒. In one process, 40 m deep pores with 2 m openings on 4 m centers are directly etched in Si. Alternatively, pores with aspect ratios of 30:1 are constructed in a low-stress SiN x membrane using a sacrificial template process whereby pillars of Si are etched and then subsequently backfilled with a dielectric using LPCVD.

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Channel electron multipliers are vacuum-electron devices for detection of charged particles and energetic photons. Several manufacturing technologies for microelectronics and microelectromechanical systems hold significant promise for the development of a new generation of silicon-based channel electron multipliers with greater capabilities and broader applications than conventional glass-based ones. This paper describes several approaches to microfabrication of such devices using surface and bulk micromachining techniques. Results are presented for fully micromachined channel electron multipliers with signal gains in the range of 10-10.