Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor

Abstract

In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 °C to 300 °C.

Role of the electronically-active amorphous state in low-temperature processed In2O3 thin-film transistors

“…Mean mobility shows an increase up to 225 1C beyond which it nominally saturates at E(2 to 4) cm 2 V À1 s À1 . These values are in line with previous reports that have employed spin-coating, 7,11,14 and a recent report of blade-coating. 9 In contrast, c-In 2 O 3 TFTs show a monotonic mobility trend wherein the mobilities keep increasing with annealing temperature.…”

“…10 cm 2 V À1 s À1 ) at annealing temperatures in the range of 300 1C to 400 1C via a condensation reaction that converts the indium precursor to the oxide. 1,[12][13][14][15] With an aim of reducing the thermal budget, combustion synthesis has been recently introduced, targeting both TFT and electron transport layer applications. 11,16,17 Aided by a fuel that is mixed with the precursor solution, the processing temperature required for In 2 O 3 conversion is reduced.…”

High‐Performance, Mechanically Flexible, and Vertically Integrated 3D Carbon Nanotube and InGaZnO Complementary Circuits with a Temperature Sensor

“…To date, TFTs have been applied to wearable, human‐interactive, and prosthetic devices that cannot be achieved using conventional silicon‐based integrated devices in terms of mechanical flexibility. Diverse patterning methods, which have used nanowires, nanotubes, nanofilms, and other solution‐processed materials, have been employed to fabricate transistors on user‐defined substrates. Furthermore, many kinds of sensors have been reported based on similar material systems of transistors .…”

High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

“…Obvious increase of the I DS in response to positive V GS within both linear and saturation regions was obtained, which is typical of a n-type enhancement long channel FET. 24,25,30,37 The transfer characteristic and subthreshold parameters of the device are also presented in Fig. 5b and c, respectively.…”