Fabrication of high performance pentacene thin film transistors using poly(4-vinylphenol) as the gate insulator on polyethyleneterephthalate substrates

Byun, Hyun Sook; Xu, Yongxian; Song, Chang Geun

doi:10.1016/j.tsf.2005.07.200

Cited by 39 publications

(14 citation statements)

References 6 publications

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“…Cross-linked cyanoethylated poly(vinyl alcohol) (CR-V) was reported to have a high dielectric constant up to 12.1 at 20 Hz and a low leakage current of 10 -7 A/cm 2 at 2 MV/cm as well as a low RMS roughness of 0.3-0.4 nm [64]. Lack of solvent resistance is another weakness for some polymer, but with some extra treatment, it could turn to a good chemical-resistant material, such as cross-linked PVP [65]. The performance is limited with single dielectric layer due to either a low permittivity or large polarity at the interface.…”

Section: Inorganic Dielectric Materialsmentioning

confidence: 99%

Progress in flexible organic thin-film transistors and integrated circuits

et al. 2016

Science Bulletin

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Section: Inorganic Dielectric Materialsmentioning

confidence: 99%

Progress in flexible organic thin-film transistors and integrated circuits

et al. 2016

Science Bulletin

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“…OTFTs fabricated with traditional SiO 2 , PMMA, or polyvidone (PVP) as gate dielectric require a high operating voltage due to large threshold voltage (> 5 V). [4][5][6] There are several ways to reduce the threshold voltage: (1) Use cross-linking agents to modify the low-j polymer gate dielectrics; 7,8 (2) use hybrid organicinorganic dielectrics with smaller thickness; 9,10 (3) use high-j materials as gate dielectric. Various high-j materials have been employed as the gate dielectric of pentacene OTFTs, and their carrier mobility varies from 2 Â 10 À2 to 1.4 cm 2 V À1 s À1 with low threshold voltage.…”

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confidence: 99%

High-performance organic thin-film transistor by using LaNbO as gate dielectric

Han

Song

Tang

et al. 2015

Applied Physics Letters

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Pentacene organic thin-film transistors (OTFTs) using La x Nb (1Àx) O y as gate dielectric with different La contents (x ¼ 0.347, 0.648) have been fabricated and compared with those using Nb oxide or La oxide. The OTFT with La 0.648 Nb 0.352 O y as gate dielectric can achieve a high carrier mobility of 1.14 cm 2 V À1 s À1 (about 1000 times and 2 times those of the devices using Nb oxide and La oxide, respectively), and has negligible hysteresis of À0.130 V, small sub-threshold swing of 0.280 V/ dec, and low threshold voltage of À1.35 V. AFM and XPS reveal that La can suppress the formation of oxygen vacancies in Nb oxide while Nb can alleviate the hygroscopicity of La oxide, which results in a more passivated and smoother dielectric surface, leading to larger pentacene grains grown and thus higher carrier mobility. The OTFT with Nb oxide has an anticlockwise hysteresis but the device with La oxide shows an opposite direction. This can be explained in terms of donorlike traps due to oxygen vacancies and acceptor-like traps originated from hydroxyl ions formed after La 2 O 3 absorbing water moisture. V

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“…Many organic polymeric materials and organic/inorganic hybrid materials have been developed to resolved these problems; examples include amorphous fluoropolymer (CYTOP) [12], poly(vinylphenol) (PVP) [13], polyimide (PI) [14], poly(methylmethacrylate) (PMMA) [15], poly(styrene) (PS) [16], and organic/inorganic hybrid polymers [17].…”

Section: Introductionmentioning

confidence: 99%