2014
DOI: 10.1007/s11664-014-3093-6
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Fabrication of High-Temperature-Stable Thermoelectric Generator Modules Based on Nanocrystalline Silicon

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Cited by 21 publications
(10 citation statements)
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“…Since the PN-TEG does not require a hot side substrate and metallization it could hereby be characterized up to 1043 K on the hot side temperature (see supplemental information S.3) which is considerably higher than the maximum hot side temperature of 873 K reported on the conventional TEG [24] showing how a thermoelectric module can benefit from the PN-TEG architecture.…”
Section: Performance Comparison Between Pn-tegs and Conventional Tegsmentioning
confidence: 95%
“…Since the PN-TEG does not require a hot side substrate and metallization it could hereby be characterized up to 1043 K on the hot side temperature (see supplemental information S.3) which is considerably higher than the maximum hot side temperature of 873 K reported on the conventional TEG [24] showing how a thermoelectric module can benefit from the PN-TEG architecture.…”
Section: Performance Comparison Between Pn-tegs and Conventional Tegsmentioning
confidence: 95%
“…With a ZT value of ~0.4 at room temperature, the thermoelectric performance is comparable with the best value recorded in silicon nanowire system. Harvesting (forced convection, ΔT = 5.5) Kessler (TEG) [193] 2014 surface) at a forced ΔT, but also in the total µW of mV generated without information on area or temperature differences employed. The power density and also the power density divided by ΔT 2 [2] seem to be the preferred magnitudes of merit, possibly because they are the standard for comparison of macroscopic commercial modules.…”
Section: Silicon-based Nanostructures In Thermoelectric Generator Dev...mentioning
confidence: 99%
“…. As references, we use a TEG built from the same source material as the PNG (blue squares) . Since elevated temperatures are not accessible we show complementary simulation results of a TEG.…”
Section: Devicesmentioning
confidence: 99%