Fabrication of Homojunction Using Spray Pyrolised CdS Thin Film by Copper Diffusion

Abstract

We continue to investigate possible signatures of a pre-inflationary anisotropic phase in two-point and three point correlation functions of the curvature perturbation for high-momentum modes which exit the horizon well after isotropization. The late time dynamics of these modes is characterized by a non-Bunch Davies vacuum state which encodes all the information about initial anisotropy in the background space-time. We observe that, unlike the non-planar momenta, there exist regimes of planar momenta for which scale invariance of the power spectrum is strongly broken. This regime of planar momenta gives rise to enhanced non-Gaussianity in certain squeezed triangle configurations, although the enhancement of the f N L parameter is limited by the breakdown of linear perturbation theory at "exact planarity". Finally, we demonstrate that for the range of planar modes for which scale invariance of the power spectrum is preserved, non-Gaussianity in the curvature perturbation spectrum is naturally constrained to be extremely small.

Amorphous selenium thin films prepared using chemical bath deposition: optimization of the deposition process and characterization

“…This selenium film was used for the selenization process. In our laboratory, over the past several years we have been able to deposit different semiconducting chalcogenide films, such as CdS [8], CuInSe 2 [9], Cu 3 Se 2 [10] and CuInS 2 [11], using the CBD technique. This expertise is used for the preparation of the selenium thin film.…”

Formation of p-type CdS thin films by laser-stimulated copper diffusion

“…The n-type CdS thin films (with a thickness of 2-3 µm and dimensions of about 8 × 8 mm) were obtained on glass and In-coated glass substrates by vacuum-evaporation in a quasi-closed volume [8,9]. The temperature of the substrates was 250 • C. The resistivity of as-grown n-type CdS films was about 4×10 7 Ohm cm −1 . Two closely-spaced semitransparent Cu films in circular form were deposited onto the upper surface of the CdS film by vacuum evaporation.…”

“…The preparation of p-n homojunction in spray pyrolized CdS thin film by thermal § Permanent address: Institute of Physics, Azerbaijan Academy of Sciences, 370143 Baku, Azerbaijan. annealing of nCdS/Cu bilayer structures was reported in [6,7].…”

In situassembled homojunctions in solution grown Pb1 xFexS nanoparticle films

“…Very recently it was reported that the fabrication of p-n homojunctions is possible in CdS and ZnO. Fabrication of homojunction solar cells in CdS was made possible using spray pyrolysis coupled with vacuum evaporation [1,2]. Copper was deposited over the n-CdS thin film and the bilayer was annealed at a temperature of 300 • C under high vacuum.…”