Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries

Yu, Jae Su; Song, Jin Dong; Lee, Y.T.; Lim, H.

doi:10.1007/s00339-003-2323-1

Cited by 5 publications

(8 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Laser structure was grown by metalorganic chemical vapor deposition on GaAs. The structure was composed of 3000 nm n-AlGaAs cladding, 500 nm n-AlGaAs waveguide, 8 [16]. For the multilayer films, two distinct regions were defined, where the first one is for QWI (SiO 2 ) and the second is for QWI suppression (SrF 2 versus Si x O 2 /SrF 2 ).…”

Section: Methodsmentioning

confidence: 99%

“…One of the most promising QWI approaches is impurity-free vacancy disordering (IFVD) since it does not introduce additional impurities and hence eliminates free carrier absorption losses and, in the ideal case, preserves epitaxial quality [6]. The IFVD process requires the deposition of a dielectric cap to control the degree of intermixing to be enhanced or suppressed with the appropriate dielectric materials and annealing temperature [7,9,[13][14][15][16][17]. The vacancy disordering is mainly affected by the dielectric film and the thermal stress executed by the dielectric film on the semiconductor [18].…”

Section: Introductionmentioning

confidence: 99%

“…Studies on IFVD have focused more on wavelength control or fabrication of multiwavelength lasers [7,15,16]. Work with an emphasis on achieving large intermixing selectivity with minimal wavelength and quantum efficiency disruption in the suppression region has so far been scarce with limited disclosure of the applied technique [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers

Arslan

Demir

Şahin

et al. 2018

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In semiconductor lasers, quantum well intermixing (QWI) with high selectivity using dielectrics often results in lower quantum efficiency. In this paper, we report on an investigation regarding the effect of thermally induced dielectric stress on the quantum efficiency of quantum well structures in impurity-free vacancy disordering (IFVD) process using photoluminescence and device characterization in conjunction with microscopy. SiO 2 and Si x O 2 /SrF 2 (versus SrF 2) films were employed for the enhancement and suppression of QWI, respectively. Large intermixing selectivity of 75 nm (125 meV), consistent with the theoretical modeling results, with negligible effect on the suppression region characteristics, was obtained. Si x O 2 layer compensates for the large thermal expansion coefficient mismatch of SrF 2 with the semiconductor and mitigates the detrimental effects of SrF 2 without sacrificing its QWI benefits. The bilayer dielectric approach dramatically improved the dielectric-semiconductor interface quality. Fabricated high power semiconductor lasers demonstrated high quantum efficiency in the lasing region using the bilayer dielectric film during the intermixing process. Our results reveal that stress engineering in IFVD is essential and the thermal stress can be controlled by engineering the dielectric strain opening new perspectives for QWI of photonic devices.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers

Arslan

Demir

Şahin

et al. 2018

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…In this work, we report an IFVD method using bilayer dielectric capping and extended time annealing at relatively low annealing temperatures compared to the previous reports 8,11,13,16,17,[20][21][22] . SiO 2 layer was used for enhanced intermixing and Si x O 2 /SrF 2 bilayer was developed for intermixing suppression.…”

Section: Introductionmentioning

confidence: 98%

“…For InGaAs, GaAs or AlGaAs QW materials, SiO 2 and Si 3 N 4 have been reported to induce disordering, whereas Si 3 N 4 , TiO 2 and SrF 2 have been commonly used for the suppression of intermixing 8,9,[12][13][14][15] . SiO 2 was demonstrated to enhance and suppress intermixing by varying its stoichiometry through modification of flow rates in plasma enhanced chemical vapor deposition (PECVD) systems 16 . In high power lasers, it is rare that both the less deterioration in the suppression region and large intermixing selectivity [17][18][19] .…”

Section: Introductionmentioning

confidence: 99%

IFVD-based large intermixing selectivity window process for high power laser diodes

Arslan

Şahin

Demir

et al. 2018

Semiconductor Lasers and Laser Dynamics VIII

View full text Add to dashboard Cite

Catastrophic optical mirror damage (COMD) is a key issue in semiconductor lasers and it is initiated by facet heating because of optical absorption. To reduce optical absorption, the most promising method is to form non-absorbing mirror structures at the facets by obtaining larger bandgap through impurity-free vacancy disordering (IFVD). To apply an IFVD process while fabricating high-power laser diodes, intermixing window and intermixing suppression regions are needed. Increasing the bandgap difference (ΔE) between these regions improves the laser lifetime. In this report, SrF 2 (versus Si x O 2 /SrF 2 bilayer) and SiO 2 dielectric films are used to suppress and enhance the intermixing, respectively. However, defects are formed during the annealing process of single layer SrF 2 causing detrimental effects on the semiconductor laser performance. As an alternative method, Si x O 2 /S r F 2 bilayer films with a thin Si x O 2 dielectric layer is employed to obtain high epitaxial quality during annealing with small penalty on the suppression effect. We demonstrate record large ΔE of 125 meV. Broad area laser diodes were fabricated by the IFVD process. Fabricated high-power semiconductor lasers demonstrated conservation of quantum efficiency with high intermixing selectivity. The differential quantum efficiencies are 81%, 74%, 66% and 46% for as grown, bilayer protected, SrF 2 protected and QWI lasers, respectively. High power laser diodes using bilayer dielectric films outperformed single-layer based approach in terms of the fundamental operational parameters of lasers. Comparable results obtained for the as-grown and annealed bilayer protected lasers promises a novel method to fabricate high power laser diodes with superior performance and reliability.

show abstract

Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

Qiao

Tang

et al. 2017

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries

Cited by 5 publications

References 16 publications

Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers

Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers

IFVD-based large intermixing selectivity window process for high power laser diodes

Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

Contact Info

Product

Resources

About