Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond

Schreyvogel, Christoph; Temgoua, Solange; Giese, Christian; Cimalla, V.; Barjon, Julien; Nebel, Christoph E.

doi:10.1002/pssa.202000502

Cited by 7 publications

(5 citation statements)

References 34 publications

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“…Using a high concentration of phosphorous dopants (shallow activation energy level than nitrogen) (10 22 cm −3 ) improved the properties of the n-type layer [ 12 ]. Diamond orientation <100> was used to grow this n-type layer [ 13 , 259 ]. Several reports described the development of high quality p-n [ 260 , 261 ] and p-i-n [ 262 ] diamond junctions.…”

Section: Diamond-based High-power Electronic Devicesmentioning

confidence: 99%

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Hasan,

Wang,

Pala

et al. 2024

Nanomaterials

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High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240–600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications.

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Section: Diamond-based High-power Electronic Devicesmentioning

confidence: 99%

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Hasan,

Wang,

Pala

et al. 2024

Nanomaterials

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“…61 Metal-catalyzed diamond etching has been applied to design and microfabricate patterns on diamond surface. Christoph Schreyvogel et al 180 have fabricated structures with V-shape (100)-oriented diamond. With photolithography and electron beam evaporation, they fabricated square-shaped Ni masks with 5 × 5 and 10 × 10 μm on diamond surface.…”

Section: Metal-catalyzed Transitionmentioning

confidence: 99%

Rational design of diamond through microstructure engineering: From synthesis to applications

Ku,

Huang,

et al. 2024

Carbon Energy

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Diamond possesses excellent thermal conductivity and tunable bandgap. Currently, the high‐pressure, high‐temperature, and chemical vapor deposition methods are the most promising strategies for the commercial‐scale production of synthetic diamond. Although diamond has been extensively employed in jewelry and cutting/grinding tasks, the realization of its high‐end applications through microstructure engineering has long been sought. Herein, we discuss the microstructures encountered in diamond and further concentrate on cutting‐edge investigations utilizing electron microscopy techniques to illuminate the transition mechanism between graphite and diamond during the synthesis and device constructions. The impacts of distinct microstructures on the electrical applications of diamond, especially the photoelectrical, electrical, and thermal properties, are elaborated. The recently reported elastic and plastic deformations revealed through in situ microscopy techniques are also summarized. Finally, the limitations, perspectives, and corresponding solutions are proposed.

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“…8e). [36][37][38][39] Finally, metal deposition and the annealing are performed to form the source and drain ohmic contacts (Fig. 8f).…”

Section: Device Mechanism and Performancesmentioning

confidence: 99%

A Novel Ga₂O₃ Superjunction LDMOS Using P-Type Diamond with Improved Performance

Kong

Gao

Cheng

et al. 2022

ECS J. Solid State Sci. Technol.

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Gallium oxide (Ga2O3) has drawn remarkable attention for next generation power electronics applications. However, the development of Ga2O3 power devices is seriously restricted due to its inefficient p-type dopants and low thermal conductivity. Here, a novel Ga2O3 superjunction (SJ) LDMOS (laterally-diffused metal-oxide semiconductor) device with introduction of a p-type diamond layer in the drift region is proposed and numerical investigated. The drift region of the proposed Ga2O3 device consists of n-type Ga2O3, Al2O3 and p-type diamond, which is not only increases the breakdown voltage (BV) and reduces the specific on-resistance (Ron,sp), but also improves thermal performance of the device. The simulation results show that the BV and Ron,sp of the proposed device are 23.22 mΩcm2 and 7000 V, which are improved by more than 82.3% and 100% compared with those the conventional gate-connected filed-plate Ga2O3 LDMOS with a Ron,sp of 131.43mΩcm2 and a BV of 3000 V, respectively. Moreover, the thermal performance of the proposed Ga2O3 SJ LDMOS is also improved dramatically, although the power density of the proposed device is about 5.7 times higher than that of the conventional device.

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Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond

Abstract: Research data are not shared.

Cited by 7 publications

References 34 publications

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Rational design of diamond through microstructure engineering: From synthesis to applications

A Novel Ga₂O₃ Superjunction LDMOS Using P-Type Diamond with Improved Performance

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Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond

Abstract: Research data are not shared.

Cited by 7 publications

References 34 publications

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Rational design of diamond through microstructure engineering: From synthesis to applications

A Novel Ga2O3 Superjunction LDMOS Using P-Type Diamond with Improved Performance

Contact Info

Product

Resources

About

A Novel Ga₂O₃ Superjunction LDMOS Using P-Type Diamond with Improved Performance