Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 μm and erbium silicide source/drain

Yang, Jong‐Heon; Ahn, Chang–Geun; Baek, In-Bok; Jang, Moongyu; Sung, Gun Yong; Park, Byung‐Chul; Im, Kiju; Lee, Seongjae

doi:10.1016/j.tsf.2008.09.072

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“…Moreover, they require more mask process steps; at least 7 masks are needed to produce a backplane and that increases the manufacturing cost [7] . LTPS is formed by a-Si using metal-induced lateral crystallization (MILC) [8] or excimer laser annealing (ELA) [9∼11] technology. Due to the introduction of metal ions in the process of MILC, LTPS TFTs have a high leakage current [12] .…”

Section: Introductionmentioning

confidence: 99%

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Zheng¹,

Li²,

Wang³

et al. 2012

Plasma Sci. Technol.

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Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs.

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Section: Introductionmentioning

confidence: 99%