Source/drain technologies for the scaling of nanoscale CMOS device

Song, Yi; Zhou, Hualan; Xu, Qing

doi:10.1016/j.solidstatesciences.2010.12.002

Cited by 20 publications

(14 citation statements)

References 55 publications

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“…230677) diffraction peaks can be detected regardless of SnS 2 and SnS 2 ‐P samples due to the tiny amounts of SnS in the SnS 2 ‐P. A sharp Raman peak at 312 cm −1 is observed for both SnS 2 and SnS 2 ‐P, which represents the typical Raman active A 1g mode of SnS 2 . Besides, an additional peak at 221 cm −1 is identified as A g vibrational mode of SnS for SnS 2 ‐P .…”

Section: Resultsmentioning

confidence: 94%

A Plasma‐Triggered O−S Bond and P−N Junction Near the Surface of a SnS₂ Nanosheet Array to Enable Efficient Solar Water Oxidation

et al. 2019

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Ap hotoelectrochemical (PEC) cell can split water into hydrogen and oxygen with the assistance of solar illumination. However,i ts application is still limited by excessive bulk carrier recombination and sluggish surface oxygen evolution reaction (OER) kinetics.T aking SnS 2 as an example,apromising layered optoelectronic semiconductor, Ar plasma treatment strategy was used to introduce aSnS/SnS 2 PÀNheterojunction and OÀSbond near the surface of aSnS 2 nanosheet array,s imultaneously increasing the separation efficiency of photogenerated electron-hole pairs in the bulk and lowering the OER overpotential at the surface.T he onset potential of the plasma-treated SnS 2 nanosheet arrays hifts negatively to 0.16 V, and the photocurrent density at 1.23 Vvs. RHE boosts to 2.15 mA cm À2 ,which is 7times that of pristine SnS 2 .T his work demonstrates af acile plasma treatment strategy to modulate the energy band structure and surface chemical states for improved PEC performance.

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Section: Resultsmentioning

confidence: 94%

A Plasma‐Triggered O−S Bond and P−N Junction Near the Surface of a SnS₂ Nanosheet Array to Enable Efficient Solar Water Oxidation

et al. 2019

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“…[ 6,7 ] Among TMDs, tin disulfide (SnS 2 ) of the IV–VI group has recently emerged as a 2D layered metal sulfide with various applications, such as visible light photocatalysis in CO 2 reduction and water splitting, [ 8,9 ] use in field‐effect transistors, [ 10 ] and heterojunctions. [ 11 ] The atomic structure of SnS 2 is similar to that of MoS 2 . SnS 2 exhibits a two‐hexagonal (2H)‐polytype crystal structure with space symmetry P

\overset{3}{true}

m1 along with an S anion that is packed hexagonally between an octahedrally coordinated Sn cation (Figure S1, Supporting Information).…”

Section: Introductionmentioning

confidence: 95%

“…[ 8,15–18 ] Gong et al. [ 11 ] doped SnS 2 with a transition metal (TM) using very low percentages of Co and Cu to introduce interstitial doping in the vdW gap. Shi et al.…”

Section: Introductionmentioning

confidence: 99%

Bandgap Shrinkage and Charge Transfer in 2D Layered SnS₂ Doped with V for Photocatalytic Efficiency Improvement

Shelke

Wang

Chiou

et al. 2021

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Effects of electronic and atomic structures of V‐doped 2D layered SnS2 are studied using X‐ray spectroscopy for the development of photocatalytic/photovoltaic applications. Extended X‐ray absorption fine structure measurements at V K‐edge reveal the presence of VO and VS bonds which form the intercalation of tetrahedral OVS sites in the van der Waals (vdW) gap of SnS2 layers. X‐ray absorption near‐edge structure (XANES) reveals not only valence state of V dopant in SnS2 is ≈4+ but also the charge transfer (CT) from V to ligands, supported by V Lα,β resonant inelastic X‐ray scattering. These results suggest V doping produces extra interlayer covalent interactions and additional conducting channels, which increase the electronic conductivity and CT. This gives rapid transport of photo‐excited electrons and effective carrier separation in layered SnS2. Additionally, valence‐band photoemission spectra and S K‐edge XANES indicate that the density of states near/at valence‐band maximum is shifted to lower binding energy in V‐doped SnS2 compare to pristine SnS2 and exhibits band gap shrinkage. These findings support first‐principles density functional theory calculations of the interstitially tetrahedral OVS site intercalated in the vdW gap, highlighting the CT from V to ligands in V‐doped SnS2.

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“…[ 11,12 ] Relying on the nature of 2D materials and spatial control of device fabrication, different doping methods for 2D materials have been used to modify the transport behavior of a 2D system. [ 11–16 ] However, current approaches such as surface transfer doping (STD), [ 11,13,14 ] solvent‐based intercalation, [ 15 ] and atomic substitution (AS) [ 12,16 ] are limited in their ability to continuously and stably modulate the conductance of 2D materials.…”

Section: Introductionmentioning

confidence: 99%

“…Various metal atoms intercalated into the van der Waals gap, combined with lithography, achieve spatial control of doping in 2D materials. [ 15 ] But intercalated metal atoms can easily lead to heavily doped 2D materials. Furthermore, nonbonding atoms would move under the applied electrical field, which would make the intrinsic doping behavior gradually missing.…”

Section: Introductionmentioning

confidence: 99%

Controllable Doping in 2D Layered Materials

et al. 2021

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For each generation of semiconductors, the issue of doping techniques is always placed at the top of the priority list since it determines whether a material can be used in the electronic and optoelectronic industry or not. When it comes to 2D materials, significant challenges have been found in controllably doping 2D semiconductors into p‐ or n‐type, let alone developing a continuous control of this process. Here, a unique self‐modulated doping characteristic in 2D layered materials such as PtSSe, PtS0.8Se1.2, PdSe2, and WSe2 is reported. The varying number of vertically stacked‐monolayers is the critical factor for controllably tuning the same material from p‐type to intrinsic, and to n‐type doping. Importantly, it is found that the thickness‐induced lattice deformation makes defects in PtSSe transit from Pt vacancies to anion vacancies based on dynamic and thermodynamic analyses, which leads to p‐ and n‐type conductance, respectively. By thickness‐modulated doping, WSe2 diode exhibits a high rectification ratio of 4400 and a large open‐circuit voltage of 0.38 V. Meanwhile, the PtSSe detector overcomes the shortcoming of large dark‐current in narrow‐bandgap optoelectronic devices. All these findings provide a brand‐new perspective for fundamental scientific studies and applications.

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Source/drain technologies for the scaling of nanoscale CMOS device

Cited by 20 publications

References 55 publications

A Plasma‐Triggered O−S Bond and P−N Junction Near the Surface of a SnS₂ Nanosheet Array to Enable Efficient Solar Water Oxidation

A Plasma‐Triggered O−S Bond and P−N Junction Near the Surface of a SnS₂ Nanosheet Array to Enable Efficient Solar Water Oxidation

Bandgap Shrinkage and Charge Transfer in 2D Layered SnS₂ Doped with V for Photocatalytic Efficiency Improvement

Controllable Doping in 2D Layered Materials

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Source/drain technologies for the scaling of nanoscale CMOS device

Cited by 20 publications

References 55 publications

A Plasma‐Triggered O−S Bond and P−N Junction Near the Surface of a SnS2 Nanosheet Array to Enable Efficient Solar Water Oxidation

A Plasma‐Triggered O−S Bond and P−N Junction Near the Surface of a SnS2 Nanosheet Array to Enable Efficient Solar Water Oxidation

Bandgap Shrinkage and Charge Transfer in 2D Layered SnS2 Doped with V for Photocatalytic Efficiency Improvement

Controllable Doping in 2D Layered Materials

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A Plasma‐Triggered O−S Bond and P−N Junction Near the Surface of a SnS₂ Nanosheet Array to Enable Efficient Solar Water Oxidation

A Plasma‐Triggered O−S Bond and P−N Junction Near the Surface of a SnS₂ Nanosheet Array to Enable Efficient Solar Water Oxidation

Bandgap Shrinkage and Charge Transfer in 2D Layered SnS₂ Doped with V for Photocatalytic Efficiency Improvement