Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition

Abstract

Homoepitaxial growth on a 6H-SiC (0001)Si face was carried out successfully at 1500°C by chemical vapor deposition. This temperature is 300°C lower than typical well-known growth temperatures. The p-n junction diodes were fabricated with the grown layers and showed very good rectification. The breakdown electric field was estimated to be 2.4×106 V/cm using the characteristics of the p-n junction diodes. This value is comparable with high-temperature grown layers. The fabricated p-n junction diodes showed blue light emission in the forward-biased region.

Homoepitaxial growth of 4H-SiC on on-axis C-face substrates by chemical vapor depositon

“…Therefore, control of the polytype is a key factor in the homoepitaxy of SiC {0 0 0 1} substrate. Matsunami et al or Kong et al developed what is called step-controlled epitaxy in 1987 [3,4], in which the growth was performed on off-axis substrates at several degrees toward ½11 % 20 direction. The off-axis substrate reveals the lattice structure at the substrate surface.…”

Homoepitaxial Growth on a 4H‐SiC C‐Face Substrate

“…Typical etching temperature, reactor pressure, H 2 flow rate, C 3 H 8 flow rate, and etching time were 1600°C, 250 mbar, 40 slm, 3.33 sccm, and 3 min. The typical gas flow rates of H 2 and SiH 4 were 40 slm and 6.67 sccm, respectively.…”

“…For this reason, 3C-SiC can easily be made to include a-SiC epitaxial layers grown on (0001) substrates by CVD. [2,3] Shibahara et al and Kong et al developed "step-controlled epitaxy" in 1987, [4,5] in which the growth is performed on off-axis substrates tilted several degrees toward the [11][12][13][14][15][16][17][18][19][20] direction. An off-axis substrate shows the stacking sequences along the c-axis at the substrate surface.…”

Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [ $$ {\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}} $$ ]- and [0001]-Oriented Silicon Carbide Substrates

“…Homoepitaxial growth of a single polytype in this orientation is usually achieved through the use of vicinal substrates which are intentionally miscut toward [1120]. 10 The polytype of the vicinal substrate is inherited by the epitaxial layer as a result of step-controlled epitaxy, [11][12][13][14] wherein the terrace width is narrower than the diffusion distance. Thus, surface adatoms will have sufficient time to migrate to and be accommodated a step edge or kink site rather than nucleating on the terrace.…”