Fabrication of p-type ZnO thin films via MOCVD method by using phosphorus as dopant source

Chen, Fugang; Ye, Zhizhen; Zhao, Binghui; Zhu, Longgen; Jinlong, Lv

doi:10.1016/j.jcrysgro.2005.04.041

Cited by 46 publications

(28 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…First of all, two defects that are formed in ZnO:P prior to annealing can unambiguously be identified as oxygen and zinc vacancies, in agreement with the results of the positron-annihilation studies. 10 We note that even though the zinc vacancies were present in the investigated samples even prior to the implantation, their concentration increases after the treatment, as revealed by our complementary spin resonance measurements. This is probably not surprising as vacancies and interstitials are expected to be the primary defects created by the ion bombardment.…”

Section: Defect Origin and Formationsupporting

confidence: 57%

“…Based on simple valence electron arguments, a natural approach for p-type doping is to use group V elements such as phosphorous. Several groups have indeed reported p-type conductivity in phosphorous-doped ZnO fabricated by sputtering, 6,7 molecular beam epitaxy (MBE), 8 pulse laser deposition (PLD), 9 metal organic chemical vapor deposition (MOCVD), 10 and atomic layer deposition (ALD). 11 However, reliably and reproducibly achieving p-type ZnO material by in situ doping with P during the growth still remains a challenge since P-doped ZnO thin films grown by the same techniques are also often semi-insulating 12 or even n-type conductive.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effects of P implantation and post-implantation annealing on defect formation in ZnO

Wang¹,

Chen²,

Ren³

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Nitrogen δ-doping for band engineering of GaAs-related quantum structures J. Appl. Phys. 111, 053512 (2012) Tuning the electronic and magnetic properties of carbon-doped ZnO nanosheets: First-principles prediction J. Appl. Phys. 111, 044329 (2012) Photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques are utilized to examine the effects of P implantation and post-implantation annealing on defect formation in ZnO single crystals. From ODMR, the main defects created by ion implantation include oxygen and zinc vacancies as a well as a deep donor labeled as PD. The formation of the PD defect is likely promoted by the presence of P as it could only be detected in the P-containing ZnO. The V O and PD centers are found to exhibit low thermal stability and can be annealed out at 800 C. On the other hand, a new set of defects, such as Z, T, and D* centers, is detected after annealing. Based on measured spectral dependences of the ODMR signals, the V O , V Zn , and PD centers are shown to participate in spin-dependent recombination processes related to red emissions, whereas the Z, T, and D* centers are involved in radiative recombination over a wide spectral range of 1.55-2.5 eV. From the PL measurements, combined effects of implantation and annealing also lead to appearance of a new PL band peaking at $3.156 eV, likely due to donor-acceptor-pair recombination. The formation of the involved deep acceptor is concluded to be facilitated by the presence of P. V C 2012 American Institute of Physics. [http://dx

show abstract

Section: Defect Origin and Formationsupporting

confidence: 57%

Section: Introductionmentioning

confidence: 99%

Effects of P implantation and post-implantation annealing on defect formation in ZnO

Wang¹,

Chen²,

Ren³

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…From Figure 2, its mobility decreases with the substrate temperature increasing from 600℃ to 700℃. It is well known that the major factor, which influences the mobility, is the scattering effects, including defects scattering, grain boundary scattering, etc [21] . Sun et al [22] studied the electron conduction mechanisms in ZnO films, which implied that both the defects scattering and grain boundary scattering had a great influence on the mobility.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Structural and electrical properties of ZnO films on freestanding thick diamond films

et al. 2008

View full text Add to dashboard Cite

“…Fig. 5 shows the decay of NBE CL intensity fitted with equation (6). The measurements yielded activation energy of 118 ± 12 meV.…”

Section: Studies In N-type Znomentioning

confidence: 98%

Cathodoluminescence Studies of Electron Injection Effects in Wide-Band-Gap Semiconductors

Schwarz¹,

Chernyak²,

Flitsiyan³

2012

Cathodoluminescence

View full text Add to dashboard Cite

Fabrication of p-type ZnO thin films via MOCVD method by using phosphorus as dopant source

Cited by 46 publications

References 16 publications

Effects of P implantation and post-implantation annealing on defect formation in ZnO

Effects of P implantation and post-implantation annealing on defect formation in ZnO

Structural and electrical properties of ZnO films on freestanding thick diamond films

Cathodoluminescence Studies of Electron Injection Effects in Wide-Band-Gap Semiconductors

Contact Info

Product

Resources

About