Structural and electrical properties of ZnO films on freestanding thick diamond films

Sun, Jian; Bai, Yang; Sun, Jingchang; Du, Guotong; Jiang, Xin

doi:10.1007/s11434-008-0398-y

Cited by 6 publications

(4 citation statements)

References 24 publications

(35 reference statements)

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“…The Zn/O ratio of no-doped ZnO prepared by sputtering is often larger than 1 due to the lack of O and the excess of Zn [11] . However, in our experiment, the Zn/O ratios of the as grown and annealed ZnO films are both less than 1, which is similar to the reports of other authors [10] . The possible reason is the surface absorption of O 2 .…”

Section: Fig3 Resistivity Of the As Grown Zno At Different O 2 /(O 2supporting

confidence: 92%

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Effects of annealing on the characteristics of ZnO films deposited in various O2/(O2+Ar) ratios

Yang

Chen

et al. 2010

Optoelectron. Lett.

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C-axis oriented ZnO films are deposited on polished diamond substrates in various O 2 /(O 2 +Ar) ratios using the radio frequency (RF) magnetron sputtering technique and are subsequently annealed in oxygen ambience under the same conditions. Structural, morphologic and electrical properties of ZnO films are characterized by X-ray diffraction (XRD), high-resistance instrument, energy dispersive X-ray spectroscopy (EDS) and scanning electronic microscopy (SEM). As the O 2 / (O 2 +Ar) ratio increasing from 1/12 to 5/12, the crystallinity of the as grown ZnO films becomes better and the electrical resistivity increases slowly. After annealing, the ZnO films deposited in O 2 /(O 2 +Ar) =1/12 and 3/12 are improved greatly in crystallinity, and their electrical resistivity is enhanced by two orders of magnitude, while those deposited in O 2 /(O 2 +Ar) =5/12 are scarcely changed in crystallinity, and their resistivity is only increased by one order. In addition, the ZnO films deposited in O 2 /(O 2 +Ar) =3/12 and annealed in oxygen are with the best crystal quality and the highest resistivity.

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Section: Fig3 Resistivity Of the As Grown Zno At Different O 2 /(O 2supporting

confidence: 92%

“…Generally, the change of the resistivity is discussed from two aspects: scattering effects and Zn interstitial (or O vacancies) [6,8,10] . ZnO films often show n-type semiconducting properties because of the lack of O and the excess of Zn.…”

Section: Fig3 Resistivity Of the As Grown Zno At Different O 2 /(O 2mentioning

confidence: 99%

Effects of annealing on the characteristics of ZnO films deposited in various O2/(O2+Ar) ratios

Yang

Chen

et al. 2010

Optoelectron. Lett.

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“…The configuration of p-BDD and n-metal oxide has been most widely studied. In contrast to a continuous uniform film [ 26 , 27 , 32 , 65 , 66 , 67 , 68 , 69 , 70 , 71 , 72 , 73 ], the 1D nanostructure (e.g., NRs, NWs and NTs) that is free of defects, quantum-enhanced and has a large surface-area-to-volume ratio will not encounter the thermal mismatch with diamond, thereby substantially improving the performance of the hybrid structural heterojunction. For simplicity, we will focus on three different 1D n-type metal oxide (ZnO, TiO 2 and WO 3 )/p-BDD heterojunction structure types in this review in the following general examples.…”

Section: Diamond-based 1d Metal Oxide Heterojunction Classesmentioning

confidence: 99%

“…An in-depth study of 1D ZnO/diamond system will not only contribute to understanding the physical mechanism for epitaxial growth but also to extending the area of ZnO/diamond applications in optoelectronics devices. In the past, the existing ZnO types were usually deposited on a diamond substrate in the form of thin-film, which was used for surface acoustic wave (SAW) filters applications [65], examining structural and electrical properties [66,67,72], and for constructing p-n junction diode [68]. In the last ten years, composite 1D ZnO related-nanostructures and diamond nano-optoelectronic p-n junction devices were extensively studied.…”

Section: N-zno/p-diamond Heterojunctionmentioning

confidence: 99%

Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction

et al. 2020

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This review is mainly focused on the optoelectronic properties of diamond-based one-dimensional-metal-oxide heterojunction. First, we briefly introduce the research progress on one-dimensional (1D)-metal-oxide heterojunctions and the features of the p-type boron-doped diamond (BDD) film; then, we discuss the use of three oxide types (ZnO, TiO2 and WO3) in diamond-based-1D-metal-oxide heterojunctions, including fabrication, epitaxial growth, photocatalytic properties, electrical transport behavior and negative differential resistance behavior, especially at higher temperatures. Finally, we discuss the challenges and future trends in this research area. The discussed results of about 10 years’ research on high-performance diamond-based heterojunctions will contribute to the further development of photoelectric nano-devices for high-temperature and high-power applications.

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Influence of O2/Ar ratio on the properties of transparent conductive niobium-doped ZnO films

et al. 2009

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et al. Influence of O 2 /Ar ratio on the properties of transparent conductive niobium-doped ZnO films.Niobium-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300℃. The influence of O 2 /Ar ratio on the structural, electrical and optical properties of the as-deposited films is investigated by X-ray diffraction, Hall measurement and optical transmission spectroscopy. The lowest resistivity of 4.0×10 −4 Ω·cm is obtained from the film deposited at the O 2 /Ar ratio of 1/12. The average optical transmittance of the films is over 90%.semiconductors, electrical properties, thin films, transparent conductive oxides, sputtering Transparent conductive oxide (TCO) thin films have been extensively studied for their practical applications, such as transparent electrodes, flat panel displays and solar cells [1] . Hitherto, different metal-oxide semiconductors such as In 2 O 3 , ZnO and SnO 2 have been employed to fabricate TCO thin films [2] . Among them, ZnO, a II-VI compound with hexagonal wurtzite crystal structure has attracted much focus owing to its distinctive optical, electronic and chemical properties [3][4][5][6][7][8] . Moreover, its low price and relatively low deposition temperature make it a good candidate for industrial applications. Several chemical and physical deposition techniques such as radio frequency (RF) sputtering, direct current (DC) sputtering, spray pyr7olysis, chemical-vapor deposition (CVD), pulsed laser ablation (PLA), sol-gel, reactive thermal evaporation and ion plating have been used to deposit ZnO TCO thin films [9] , and the film properties can be adjusted by controlling the doping materials and ratios [10] , deposition parameters [11] and post treatment [12] . Many scientific and technological efforts have been made in these fields, aiming at increasing the conductivity, transmission, stability and feasibility for practical use [13][14][15][16] . However, to the best of our knowledge, no report on the preparation of Nb-doped ZnO (NZO) thin films by RF sputtering has been explored [17] . On the other hand, as the TCO thin film properties strongly depend on the reaction between material source and oxygen [18] , exposing the dependence of film properties on O 2 /Ar ratio is useful in the future science.In the present work, highly transparent and conductive NZO thin films are deposited on glass substrates by RF sputtering at 300℃ with different O 2 /Ar ratios. The influence of O 2 /Ar ratio on the structural, electrical and optical properties of the NZO films is investigated and discussed.

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Structural and electrical properties of ZnO films on freestanding thick diamond films

Cited by 6 publications

References 24 publications

Effects of annealing on the characteristics of ZnO films deposited in various O2/(O2+Ar) ratios

Effects of annealing on the characteristics of ZnO films deposited in various O2/(O2+Ar) ratios

Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction

Influence of O2/Ar ratio on the properties of transparent conductive niobium-doped ZnO films

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