Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate

Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFTs) were fabricated using platinum and erbium silicided source/drain for p- and n-channel SB-TFTs, respectively. High quality poly-Si films were obtained by crystallizing the amorphous Si films with the excimer laser annealing method. Poly-Si SB-TFTs with metallic source/drain junctions showed a large on/off current ratio and a low leakage current. Significant improvements in electrical characteristics were obtained by additional forming gas annealing in 2% H2/N2 gas ambient due to the termination of dangling bonds at the grain boundaries of the poly-Si film as well as the reduction in interface trap states at gate oxide/poly-Si channel.

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Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate

Cited by 2 publications

References 22 publications

Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 μm and erbium silicide source/drain

Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 μm and erbium silicide source/drain

Characteristics of polycrystalline silicon Schottky barrier thin film transistors fabricated using metallic junction source/drain with erbium silicide and platinum silicide

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