Fabrication of quantum Hall devices for low magnetic fields

Pierz, K.; Schumacher, B.

doi:10.1109/19.769586

Cited by 19 publications

(18 citation statements)

References 5 publications

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“…It is seen that for all of these Hall contact pairs, the ν = 2 plateau begins at a magnetic field of about 4 T. Although the sample was not illuminated with UV light, its initial carrier density varied between (1.6 -3.1) · 10 11 cm -2 and the mobility was between 1400 and 2700 cm 2 /Vs. Precision QHE measurements using a low frequency Cryogenic Current Comparator (CCC) Resistance Bridge [17] have been performed with two graphene samples; #220813 and #260514 (both with channel size 800 µm × 200 µm) and with a custom made low density GaAs device [18]. In Fig.…”

Section: Qhe Measurement At Different Hall Barsmentioning

confidence: 99%

Fabrication and Study of Large-Area QHE Devices Based on Epitaxial Graphene

Новиков

Лебедева

Pierz

et al. 2015

IEEE Trans. Instrum. Meas.

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Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metallization process. The tested devices had an initial carrier concentration of (0.6 -10)·10 11 cm -2 and showed half-integer quantum Hall effect at a relatively low (3 T) magnetic field. Application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance (QHR) in graphene and GaAs devices at moderate magnetic field strengths (≤ 7 T) showed a relative agreement within 6 · 10 -9 .

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Section: Qhe Measurement At Different Hall Barsmentioning

confidence: 99%

Fabrication and Study of Large-Area QHE Devices Based on Epitaxial Graphene

Новиков

Лебедева

Pierz

et al. 2015

IEEE Trans. Instrum. Meas.

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“…Starting from the substrate, a 600 nm thick un-doped GaAs buffer layer was deposited followed by a 14.5 nm thick un-doped Al 0.28 Ga 1-0. 28 To realize such devices, 100 or 50 Hall bars are placed in parallel by triple connections 14 . Current terminals and four potential terminals of the different Hall bars are respectively connected between them by gold paths.…”

Section: Arrays and Experimental Setupmentioning

confidence: 99%

R K /100 and RK/200 quantum Hall array resistance standards

Poirier

Bounouh

Hayashi

et al. 2002

Journal of Applied Physics

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It is theoretically possible to combine several Hall bars in arrays to define new quantum standards with perfectly quantized resistance values. We have thus, for the first time, developed and fabricated novel Quantum Hall Array Resistance Standards (QHARS) made of a large number N (N=100, 50) of Hall bars placed in parallel using a triple connections technique. The Hall resistance of these quantum standards is found to be very well quantized. On the i=2 Hall plateau, the resistance of specific good arrays stays equal to R K /2N within 5 parts in 10 9 for supplying currents up to 2 mA at a temperature of 1.3 K. The mean longitudinal resistance of the Hall bars which constitute the arrays has been determined through the analysis of the array equivalent electrical circuit. This measurement shows that the carrier transport in the Hall bars is dissipationless. This work therefore demonstrates the efficiency of the multiple connections technique and consequently that QHARS are likely to extend the QHE metrological applications.

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“…The main part of the structure is just that of p143 in Ref. [5]. Indium was alloyed to form ohmic contacts at 450 °C in vacuum.…”

Section: Resultsmentioning

confidence: 99%

Fabrication and characterization of quantum Hall devices for the resistance standard at CMS

et al. 2010

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We fabricated AlGaAs/GaAs heterostructurebased quantum Hall devices for the resistance standard at Center for Measurement Standards (CMS). The measurements using a Direct Current Comparator (DCC) show the consistency between the plateaus of =2 and 4 at the temperature T=2 K, where is the filling factor. On the other hand, the plateaus of higher filling factors may be susceptible to the reduced localization strength, under which the semiclassical effects can be important. The

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Fabrication of quantum Hall devices for low magnetic fields

Cited by 19 publications

References 5 publications

Fabrication and Study of Large-Area QHE Devices Based on Epitaxial Graphene

Fabrication and Study of Large-Area QHE Devices Based on Epitaxial Graphene

R K /100 and RK/200 quantum Hall array resistance standards

Fabrication and characterization of quantum Hall devices for the resistance standard at CMS

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