Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes

Zhao, Degang; Yang, Jing; Liu, Zongshun; Chen, Ping; Zhu, Jianjun; Jiang, Desheng; Shi, Yongsheng; Wang, Hai; Duan, Lihong; Zhang, Liqun; Yang, Hui

doi:10.1088/1674-4926/38/5/051001

Cited by 55 publications

(18 citation statements)

References 17 publications

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“…As direct bandgap semiconductors, III‐nitrides provide a wide bandgap ranging from 0.64 eV for InN and 3.4 eV for GaN to 6.2 eV for AlN, which spans the entire ultraviolet and visible band as well as the near‐infrared region . Accordingly, III‐nitrides have been widely adopted for the fabrication of light‐emitting diodes (LEDs), laser diodes (LDs), photodetectors (PDs), and solar cells . Furthermore, the spontaneous and piezoelectric polarization in wurtzite semiconductors and the high electron drift velocities can be used to fabricate high electron mobility transistors based on two‐dimensional (2D) electron gas (2DEG) in AlGaN/GaN heterostructures .…”

Section: Introductionmentioning

confidence: 99%

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Wang

Hao

et al. 2019

Advanced Materials

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to 6.2 eV for AlN, [3] which spans the entire ultraviolet and visible band [4][5][6][7] as well as the near-infrared region. [8,9] Accordingly, III-nitrides have been widely adopted for the fabrication of light-emitting diodes (LEDs), [10][11][12] laser diodes (LDs), [13][14][15] photodetectors (PDs), [16][17][18] and solar cells. [19][20][21] Furthermore, the spontaneous and piezoelectric polarization in wurtzite semiconductors [22][23][24][25] and the high electron drift velocities [26][27][28] can be used to fabricate high electron mobility transistors based on two-dimensional (2D) electron gas (2DEG) in AlGaN/GaN heterostructures. [29][30][31][32] At present, by employing metal organic chemical vapor deposition (MOCVD), [3,[33][34][35] molecular beam epitaxy (MBE), [36][37][38][39] or hydride vapor phase epitaxy (HVPE), [40][41][42] III-nitride films with high crystalline quality can be obtained on c-plane sapphire, [43][44][45] Si (111), [38,[46][47][48] or 6H-SiC [49][50][51] substrates at a high growth temperature, usually above 1000 °C. [52][53][54] However, exfoliating III-nitride films from such single-crystalline substrates proves difficult because of the strong sp 3 -type covalent bonds between the substrates and epilayers. [55] To overcome this problem, thermal release through laser radiation, [56,57] stamp-based printing, [58,59] chemical etching, [60][61][62][63][64][65][66][67] and mechanical exfoliation [54,55,68,69] from singlecrystalline substrates have been investigated. However, there still remain some bottlenecks for future applications, such as damage, limited size, and tedious steps of the flexible production process. [55] Furthermore, flexible amorphous substrates generally cannot tolerate such high growth temperature, [54] and cannot be used for epitaxial growth of single-crystalline films because of the unordered surface atomic arrangement. [70,71] Hence, it is extremely difficult to make allowance for wearable and foldable applications of next-generation (opto)electronic devices based on III-nitrides. [72] On the other hand, sp 2 -bonded 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) exhibit hexagonal in-plane lattice arrangements and weakly bonded layers. [54,73,74] If sp 3 -bonded III-nitride films can somehow be grown on sp 2 -bonded 2D materials, it is theoretically possible to transfer these functional films onto foreign flexible substrates because of the weak van der Waals interactions on both sides of the 2D materials. [68,75,76] In this case, the 2D materials not only act as a buffer layer but also provide a release layer for the mechanical exfoliation of solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet t...

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Section: Introductionmentioning

confidence: 99%

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Wang

Hao

et al. 2019

Advanced Materials

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“…GaN-based third-generation semiconductor materials and their alloys have attracted great attention [1] due to their broad applications including light-emitting diodes (LEDs) [2][3][4] and laser diodes (LDs) [5][6][7]. Although GaN-based photonic devices are widely commercialized, the relatively low hole concentration and high resistivity of p-type GaN still significantly limit the performance of such devices [8,9].…”

Section: Introductionmentioning

confidence: 99%

Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN

et al. 2020

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The effect of unintentionally doped hydrogen on the properties of Mg-doped p-GaN samples grown via metalorganic chemical vapor deposition (MOCVD) is investigated through room temperature photoluminescence (PL) and Hall and secondary ion mass spectroscopy (SIMS) measurements. It is found that there is an interaction between the residual hydrogen and carbon impurities. An increase of the carbon doping concentration can increase resistivity of the p-GaN and weaken blue luminescence (BL) band intensity. However, when hydrogen incorporation increased with carbon doping concentration, the increase of resistivity caused by carbon impurity is weaken and the BL band intensity is enhanced. This suggests that the co-doped hydrogen not only passivate Mg Ga , but also can passivate carbon impurities in Mg-doped p-GaN.

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“…[1][2][3][4] UV light emitting diodes (LEDs) and laser diodes (LDs) are considered to be of great significance for a series of applications, for example, biomedical instruments, biochemical detection, and water purification. [5][6][7][8][9] InGaN-based UV LEDs and LDs are normally grown on sapphire substrates using metalorganic chemical vapor deposition (MOCVD). However, there are several materials issues for III-N epitaxial films, such as a high defect density (10 8 -10 10 cm À2 ) and a large piezoelectric field due to the large lattice mismatch and the difference in thermal expansion coefficients between InGaN and (Al)GaN layers, resulting in the reduction of the internal quantum efficiency.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures

Chen

Park

Liu

et al. 2020

Journal of Elec Materi

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The thermal effect of the growth temperature on interface morphology and stimulated emission in ultraviolet AlGaN/InGaN multiple quantum wells (MQWs) are experimentally investigated. During the MOCVD epitaxial growth of AlGaN/InGaN MQWs, the ramping rate from a lower temperature for InGaN quantum wells (QWs) to a higher one for AlGaN quantum barriers (QBs) is intentionally changed from 1.0°C/s to 4.0°C/s. Atomic force microscopy images show that the surface morphology of InGaN QWs, which is improved by a thermal effect when the growth temperature rises to the set value of the AlGaN QBs, varies with different temperature ramping rates. The results of stimulated emission indicate that the threshold pumping power density of MQWs is decreased with increasing temperature ramping rate from 1.0°C/s to 3.0°C/s and then slightly increased when the ramping rate is 4.0°C/ s. This phenomenon is believed to result from the thermal degradation effect during the temperature ramp step. A long-time high-temperature annealing will reduce the density of indium-rich microstructures as well as the corresponding localized state density, which is assumed to contribute to the radiative recombination in the InGaN QWs. Given the great difference between optimal growth temperatures for AlGaN and InGaN layers, a higher ramping rate would be more appropriate for the growth of ultraviolet AlGaN/ InGaN MQWs.

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Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes

Cited by 55 publications

References 17 publications

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN

Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures

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