Fabrication of Semi-Polar (11-22) GaN V-Groove MOSFET Using Wet Etching Trench Opening Technique

Abstract

This is a repository copy of Fabrication of semi-polar (11-22) GaN V-groove MOSFET using wet etching trench opening technique.

Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs

“…[1][2][3] In particular, GaN vertical devices are recognized as being potentially suitable for high power applications such as in-vehicle inverters that control main motors. 4) To date, numerous device structures such as current aperture vertical electron transistors, [5][6][7] semipolar gate structure transistors, 8,9) junction FETs, [10][11][12][13] fin FETs, 14,15) planar-gate MOSFETs, [16][17][18][19][20] and trench-gate MOSFETs [21][22][23][24][25][26][27][28][29][30][31] have been investigated to experimentally demonstrate the advantage of GaN-based vertical power devices. The results of these experiments are also competitive against silicon carbide (SiC), another post-Si material with high potential.…”