2014
DOI: 10.1002/pssb.201350377
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Fabrication of SnS quantum dots for solar-cell applications: Issues of capping and doping

Abstract: We present our recent study of SnS particles in the backdrop of significant developments that have taken place so far for which a review of the present status of this material, its structural, optical, electronic characteristics, and device performance is described. To further improve the performance of low-cost chalcogenide-based solar cells, we propose to employ a thirdgeneration solar cells fabrication scheme, where an intermediate bandgap layer can be incorporated in a CIS solar cell to increase its curren… Show more

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Cited by 12 publications
(3 citation statements)
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“…ALD is a chemical-based deposition method and its characteristics are based on the self-limiting reactions of the substrate by supplying precursors and reactants sequentially. [23][24][25][26] Due to the self-limiting reactions, ALD has several advantages over conventional mechanical exfoliation and CVD. Compared to the mechanical exfoliation method, ALD can deposit uniform thin films due to precise thickness control as well as high repeatability and reproducibility over large areas.…”
Section: Introductionmentioning
confidence: 99%
“…ALD is a chemical-based deposition method and its characteristics are based on the self-limiting reactions of the substrate by supplying precursors and reactants sequentially. [23][24][25][26] Due to the self-limiting reactions, ALD has several advantages over conventional mechanical exfoliation and CVD. Compared to the mechanical exfoliation method, ALD can deposit uniform thin films due to precise thickness control as well as high repeatability and reproducibility over large areas.…”
Section: Introductionmentioning
confidence: 99%
“…Compared to ZnS QDs, SnS QDs have a narrower energy gap and relatively new synthesis methods, providing new possibilities in the field of optoelectronic detection [ 30 , 31 , 32 ]. This can also be attributed to the propensity of tin to oxidize, which results in the formation of numerous tin vacancies, thereby exhibiting p-type semiconductor characteristics [ 33 ]. The multi carriers of p-type materials are holes, which can play a role in transporting holes.…”
Section: Introductionmentioning
confidence: 99%
“…The Feature Article by Alexander V. Kolobov et al discusses the athermal amorphization of crystallized chalcogenide glasses and phase‐change alloys. In the second Feature Article, Jatin Rath et al treat problems of the fabrication of SnS quantum dots for solar cell application, i.e. issues of capping and doping.…”
mentioning
confidence: 99%