Fabrication of TaC coating on tantalum by interstitial carburization

Zhao, Ziyuan; Hui, Pengfei; Liu, Fuyuan; Wang, Xiaofei; Li, Bo; Xu, Yunhua; Zhong, Lisheng; Zhao, Mingxuan

doi:10.1016/j.jallcom.2019.03.164

Cited by 25 publications

(5 citation statements)

References 32 publications

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“…Transition metal monocarbide have the advantages of extremely high melting point (3880℃) and high temperature mechanical properties, high thermal and electrical conductivity, good thermal stability, and corrosion resistance. It has important applications in aerospace, cutting tools and other fields [1][2][3][4]. There are some important research direction for TaC, such as stability, elasticity and hardness [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Influence of pressure on the stability, electronic properties, and elastic properties of TaC

Guo

2024

Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023)

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In this study, the influence of pressure on the structures, electronic and anisotropy of TaC have been revealed by Firstprinciples calculation. The results demonstrate that the pressure does not cause phase transition and the stability of the phase decreases with increasing pressure. The TDOS of TaC have no abrupt change under press and each phase remains stable within the pressure range of 0 ~80GPa and no structural phase change occurs. The mechanical properties of Rs-TaC and NiAs-TaC are greatly affected by pressure, while that on ZB-TaC is relatively smaller.

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Section: Introductionmentioning

confidence: 99%

Influence of pressure on the stability, electronic properties, and elastic properties of TaC

Guo

2024

Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023)

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“…Among these methods, solid carburization is limited by requirements of high reaction temperatures of 2000 K or higher, difficulties in controlling product uniformity, and residual-free carbons [ 17 ]. Furthermore, solid carburization can be hazardous due to the CO gas generated during the reaction [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Tantalum Carbide Using Purified Hexane by Titanium Powder

et al. 2022

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Hexane is a safe, efficient, and cost-effective alternative to other commercial hydrocarbons for gaseous carburization; however, commercial hexane is not sufficiently pure. Titanium powder can remove oxygen-containing impurities from commercial hexane; however, research on the use of titanium powder remains limited. We investigated the purification of hexane using titanium, copper, and aluminum powders and used the purified hexane for the gaseous carburization of tantalum. Ti exhibited lower activation energy for oxidation (1.55 kJ/mol) than Cu (91.09 kJ/mol) and Al (150.25 kJ/mol) and a significantly higher oxidation rate (0.0269 g/h) in hexane at room temperature than Cu (0.0018 g/h) and Al (0.0001 g/h). The carbon content in tantalum carburized using the purified hexane was comparable to that carburized using unpurified hexane (approximately 6.22%); however, its oxygen content was significantly lower (1.39%), which indicates that the produced tantalum carbide has a higher purity. X-ray diffraction results revealed that the oxidation products of tantalum, such as Ta2O, TaO2, Ta0.8O2, and Ta2O5, were absent in the sample carburized using the purified hexane. Therefore, Ti powder can effectively remove oxygen-containing impurities from commercial hexane and facilitate its use as an effective carburizing medium for the synthesis of high-purity tantalum carbide.

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“…Among transition metal carbides, tantalum carbide (TaC) has attracted considerable attention since it has high hardness, good thermal stability, high melting temperature (3880 • C), low contact resistance, and excellent tribological performance. Based on its superior performance and promising applications in industry, nanocomposite TaC coatings have been prepared and studied by a variety of modern surface modification technologies, such as hot pressing [17], magnetron sputtering [1] [18][19] [20][21] [22] [23], in situ reaction (ISR) technique [24] [25], carburization [26] [27], pulsed laser ablation deposition [28][29] [30], chemical vapor deposition [31] [32], electrodeposition [33] and so on. Among them, one of the most widely used techniques to grow TaC films is direct current (DC) magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

“…It demonstrated that the thickness of the carbide layer has a parabolic relationship with the treatment time, and the activation energy for the process was 388.68 kJ/mol. Zhao, Z. et al [26] fabricated TaC coatings on tantalum by interstitial carburization and studied their mechanical properties and scratch resistance performance. The TaC coating (1900 HV) with hardness 14 times higher than that of the Ta substrate (137 HV) was successfully prepared.…”

Section: Introductionmentioning

confidence: 99%