Fabrication of the heterojunction diode from Y-doped ZnO thin films on p-Si substrates by sol-gel method

Sharma, Sanjeev K.; Singh, Satendra Pal; Kim, Deuk Young

doi:10.1016/j.ssc.2017.12.010

Cited by 29 publications

(4 citation statements)

References 49 publications

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“…Metal-semiconductor interface normally have to tendency to behave as Schottky more than Ohmic when the difference in work function between them is greater [13]. The threshold voltage for each sample is also measured by extrapolating the I-V curve to the intersection of the x-axis [14]. Pd sample exhibit a threshold voltage of 1.62 V while Cu sample exhibit a threshold voltage of 5.6 V. The SBH, ߶ and ideality factor, n of both samples is calculated by applying thermionic emission (TE) theory.…”

Section: Pm-2022mentioning

confidence: 99%

Performance of copper and palladium metal-semiconductor Schottky diode for optoelectronics

Zheng

Halim

2022

J. Phys.: Conf. Ser.

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The growth of ZnO nanorods (NRs) have been performed by chemical bath deposition (CBD) method on ITO glass substrate. The optical properties along with the structural of ZnO NRs were studies by Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray (EDX), X-Ray Diffraction (XRD), and UV-Visible (UV-Vis) analysis. A 100 nm of Cu metal and Pd metal were deposited on top of synthesized ZnO NRs via sputtering. The electrical properties including I-V characteristics, rectifying ratio, Schottky Barrier Height (SBH) and ideality factor were investigated. Difference in work function for both metals resulting in different I-V characteristics, hence different value of rectifying ratio, SBH and ideality factor. The Cu sample possessed rectifying ratio, SBH and ideality factor of 1.07, 0.66 eV and 6.1 respectively, while Pd sample exhibits 87.84, 0.43 eV and 5 respectively. These intriguing values made possible for these metals to potentially serve as contact for ZnO-based optoelectronics devices, e.g LED, and random laser.

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Section: Pm-2022mentioning

confidence: 99%

Performance of copper and palladium metal-semiconductor Schottky diode for optoelectronics

Zheng

Halim

2022

J. Phys.: Conf. Ser.

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“…Under illumination, the ideality factor of the devices increases with respect to the dark value. A n > 2 value indicates that leakage currents are dominant in the transport mechanisms of the devices [40]. That is, when the ideality factor values are greater than 2, tunneling improves interface recombination and becomes dominant for the current transport [41].…”

Section: Au/n-si and Au/pinus Brutia/n-si Devices Performacesmentioning

confidence: 99%

Density Functional Theory Calculations of Pinus brutia Derivatives and Its Response to Light in a Au/n-Si Device

et al. 2021

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In this study, the performance of an organic dye obtained from the bark of the red pine (Pinus brutia) tree growing in Muğla/Turkey as an interface layer in the Au/n-Si Schottky diode (SD) structure was evaluated. For this purpose, at first, the optimized molecular structure, the highest occupied molecular orbital (HOMO), and the lowest unoccupied molecular orbital (LUMO) simulations of the organic dye were calculated by the Gauss program and it was theoretically proven that the dye exhibits semiconducting properties. Then, the electrical and photodiode variables such as ideality factor, effective barrier height, series resistance, interface states density distribution, photosensitivity, and photo responsivity were evaluated employing current-voltage measurements under dark and different illumination densities. Additionally, C-V measurements were used to demonstrate that the fabricated device has capacitive features and this capability varies as a function of the frequency. Under these measurements, the possible conduction mechanism for the organic dye-based Au/n-Si device was investigated and the results showed that Au/Pinus brutia/n-Si may be a good candidate for optoelectronic applications.

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“…To enhance the properties compared to n-ZnO/p-Si based heterojunction diode, n-type Al-doped ZnO film grown over p-Si substrate assembly was used to fabricate heretojunction diode which exhibited improved electrical properties [30]. Yttrium (Y) doped ZnO thin film over p-Si substrate was deposited by sol-gel process and their electrical properties were examined [31]. It was observed that the Y-doped ZnO based heterojunction diodes exhibited better electrical characteristics because of the availability of more donor electrons and hence cause the Fermi energy level shift to the conduction band [31].…”

Section: Introductionmentioning

confidence: 99%

“…Yttrium (Y) doped ZnO thin film over p-Si substrate was deposited by sol-gel process and their electrical properties were examined [31]. It was observed that the Y-doped ZnO based heterojunction diodes exhibited better electrical characteristics because of the availability of more donor electrons and hence cause the Fermi energy level shift to the conduction band [31].…”

Section: Introductionmentioning

confidence: 99%

Growth of n-Ga doped ZnO nanowires interconnected with disks over p-Si substrate and their heterojunction diode application

Al‒Hadeethi¹,

Badran²,

Umar³

et al. 2020

mat express

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In this paper, the heterojunction diode based on n-Ga doped ZnO nanowires interconnected with disks/p-Si assembly was fabricated and their low-temperature electrical properties were examined. The Ga-doped ZnO nanowires interconnected with disks were grown over p-Si substrate and studied by numerous techniques to understand the structural, compositional and morphological characteristics. Electrical properties, at lowtemperatures ranging from 77 K-295 K, were examined for the fabricated heterojunction diode assembly both in reverse and forward biased conditions which exhibited an excellent stability over all the temperature range. The detailed electrical characterizations revealed that the current decreases gradually from 1.9 A, to 0.87 A to 0.84 A when temperature increases from 77 K, 100 K to 150 K and then increases gradually from 1.86 A-3.36 A and to 9.95 A when temperature increases from 200 K-250 K and to 295 K, respectively. Both the highest rectifying ratio at 100 K and the lowest one at 295 K occur in the voltage range of 2-5 V.

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Fabrication of the heterojunction diode from Y-doped ZnO thin films on p-Si substrates by sol-gel method

Cited by 29 publications

References 49 publications

Performance of copper and palladium metal-semiconductor Schottky diode for optoelectronics

Performance of copper and palladium metal-semiconductor Schottky diode for optoelectronics

Density Functional Theory Calculations of Pinus brutia Derivatives and Its Response to Light in a Au/n-Si Device

Growth of n-Ga doped ZnO nanowires interconnected with disks over p-Si substrate and their heterojunction diode application

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