Fabrication of TiO₂-Based Transparent Conducting Oxide Films on Glass by Pulsed Laser Deposition

Abstract

Nb-doped anatase TiO 2 (Ti 0:94 Nb 0:06 O 2 ) films with excellent conductivity and transparency were deposited on non-alkali glass by pulsed laser deposition. X-ray diffraction analysis and transmission electron microscopy confirmed that the obtained films were polycrystalline with anatase structure. The films deposited at a substrate temperature of 250 C with subsequent H 2 annealing at 500 C showed a resistivity of 1:5 Â 10 À3 Ácm at room temperature and an optical transmittance of 60 -80% in the visible region. These results indicate that anatase Ti 0:94 Nb 0:06 O 2 has great potential as a transparent conducting oxide that could replace Sn-doped In 2 O 3 (ITO).

Structural, electrical and optical properties of sputter-deposited Nb-doped TiO2 (TNO) polycrystalline films

“…This was followed by PLD growth of polycrystalline Nb-doped TiO 2 (TNO) films on glass, indicating ρ of 1.5 × 10 − 3 Ω cm and transmittance T r of 60-80% [7]. Lower ρ value down to 5 × 10 − 4 Ω cm was attained by post-annealing PLD-grown amorphous films under pure H 2 atmosphere [8].…”

Effects of Substrate Temperature on Properties of Tin-Doped Indium Oxide Films Deposited by Activated Electron Beam Evaporation

“…The ZnO film has problems of durability and poor etching characteristics, and if the ZnO material is not mass-produced, the costs are high. Ichinose et al 9) described a development method using TiO2 material and the pulse laser deposition (PLD) method, but it is difficult to fabricate a large-area product in this method. In addition, TiO2 is durable and lithography is therefore difficult.…”

Low Resistive TiO<sub>2</sub> Deposition by LPCVD Using TTIP and NbF<sub>5</sub> in Hydrogen-Ambient

“…However, it is considered that the conductivity control is more difficult than the other TCO such as ITO, Sn 2 O and ZnO since d-orbital contributes to forming TiO 2 . Recently, physical vapor deposition such as laser-ablation and reactive sputtering with the post-annealing in reduction ambient have been applied to control the conductivity by using Nb as a donor-dopant and achieved fabrication of highly conductive TiO 2 layer [6] [7]. In the results, it is seemed to be required to enhance the electronic activation of the donor [8], in which Ti 3+ reduced from Ti 4+ probably plays an important role of the conduction in TiO 2 .…”