Fabrication of Ultra-large Scale Integrated by Electroless Neutral Copper Plating.

Nawafune, Hidemi; Nakao, Seiichiro; Mizumoto, Shozo; Murakami, Yosiki; Hasimoto, Sin

doi:10.4139/sfj.50.374

Cited by 4 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…as reducing agent, 0.6 M ethylenediamine as complexing agent, and HNO 3 pre-mixed in DI water at pH 6.8. 2,18,19 4. The Ru film, one of the diffusion barrier, was deposited on TiN using the MOCVD process with a bis͑ethyl--cyclopentadienyl͒ ruthenium (Ru(EtCp) 2 ) precursor.…”

Section: Methodsmentioning

confidence: 99%

Superconformal Cu Electrodeposition on Various Substrates

Kim

Cho

Kim

et al. 2005

Electrochem. Solid-State Lett.

View full text Add to dashboard Cite

For application to Cu interconnection, superconformal electrodeposition has been performed on various substrates, including physical vapor deposited ͑PVD͒ Cu, two kinds of electroless deposited ͑ELD͒ Cu, TiN barrier, and metallorganic chemical vapor deposited Ru. ELD Cu with HCHO as the reducing agent was compatible with PVD Cu in terms of conformal characteristics and film continuity. Both PVD and ELD Cu seed layers enabled superconformal filling with distinct bumps. Superfilling was also attained on resistive substrates of TiN and Ru through Pd activation and subsequent slight seeding by electrodeposition to enhance the action of additives.

show abstract

Section: Methodsmentioning

confidence: 99%

Superconformal Cu Electrodeposition on Various Substrates

Kim

Cho

Kim

et al. 2005

Electrochem. Solid-State Lett.

View full text Add to dashboard Cite

show abstract

“…16,17 The electrolessplated copper using paraformaldehyde as a reducing agent ͑HCHO-ELP copper seed͒ was deposited from a solution consisting of 0.03 mol/L copper sulfate (CuSO 4 •5H 2 O), 0.05 mol/L ethylenediaminetetraacetic acid ͑EDTA͒, 0.1 mol/L paraformaldehyde ͑HCHO͒ as a reducing agent, and RE-610 as a surfactant at pH 13 based on potassium hydroxide ͑KOH͒. After cleaning, palladium ͑Pd͒ activation on the pretreated TiN layer was performed in an activating solution, which was composed of palladium dichloride (PdCl 2 , 0.1 g/L͒, 35% hydrochloric acid ͑HCl, 3 mL/L͒, and 50% HF ͑5 mL/L͒.…”

Section: Methodsmentioning

confidence: 99%

Investigation of various copper seed layers for copper electrodeposition applicable to ultralarge-scale integration interconnection

Kim

Lee

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

As a superior substituent for the chemical-vapor deposition and physical-vapor deposition ͑PVD͒ Cu processes in an ultralarge-scale integrated interconnection, electrodeposition on two kinds of electroless-plated Cu seed layers was investigated. Co͑II͒ and formaldehyde were used as reducing agents for each electroless plating. Two samples of electroless-plated seed layers had relatively higher resistivity due to rough and irregular grains and weakly developed ͑111͒ texture, which are peculiarities of electroless plating. However, the Cu electrodeposited onto the electroless-plated seed showed reasonably good characteristics in resistivity, impurity level, crystalline structure, and surface roughness compared to those on the conventional PVD Cu seed. For the gap filling in the damascene structure, the electroless seed layer plating using formaldehyde and the subsequent electrodeposition on a patterned wafer showed an excellent filling profile without any voids or keyholes. After 400°C annealing in a N 2 atmosphere, adhesion between the Cu/barrier interfaces of electrodeposited copper on the two electroless-plated seeds was highly improved.

show abstract