1Vlinamifutami, Akashi, A novel electroless Ni Plating bath using Ti (III) ions as reluctant was proposed.In an industrial application of this plating bath, stability of the plating bath and plating rate are particularly important.Effects of plating bath components on Ni deposition rate onto Urethane foam or copper sheet were investigated, elucidating that Ni ( II ) ions, nitrilotriacetic acid and ammonium hydroxide concentration were important factors to control Ni deposition rate.Purity of Ni film reduced with Ti (III) ions was very high exceeding 99.9%.

Copper promises to replace aluminum in ULSI metallization thanks to its better conductivity and reliability. ULSI metallization is formed by electroless neutral copper plating using cobalt(II)compound as a reducing agent. Results show good storage stability,and trenches/holes on silicon wafers are filled by copper deposits.Hydrogen gas did not evolved in the plating reaction,and not effect from alkaline metal ions was seen.This process may thus be applied to ULSI matallization,using electroless neutral plating with cobalt(II)compound as a reducing agent.

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