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Cooper appears to offer better conductivity and reliability in ULSI metallization than aluminum, and the current research confirms copper potential in this regard.ULSI metallization is accomplished by electrodepositing copper from ethylenediamine complex baths using the additives glycine, ammonium sulfate, and a small quantity of thiodiglycollic acid. These baths produce good throwing powder and fill trenches and contact holes on silicon wafers with giant grains of void-free copper deposits. ULSI metallization using copper produced no voids as are formed due to the absorption of polyethylene glycol in the presence of chloride ions, thus avoiding a major drawback of ULSI metallization.Results of the current research have demonstrated the potential for use of copper in ULSI metallization accomplished through electrodeposition of copper using ethylenediamine complex baths.

Bismuth plated films have been used as a high-temperature joining in SiC power device because of their outstanding melting point. Electroless bismuth plating intended to have a "weak acidic" was investigated using Sn 2+ ion as the reducing agent and citrate as the complexing agent. Complex baths exhibited good stability, and pure bismuth films were deposited. Experiments in polarization characteristics confirmed the mixed potential theory including local potential-current relationships for bismuth deposition.

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