Moreover, current density-voltage (J-V) was measured to know the performance of present Schottky diode. The effect of native defects at the interface was also studied by using cathodoluminescence spectroscopy by varying different accelerating voltage. The textile substrate was used for the growth of ZnO nanorods by using the aqueous chemical growth (ACG) method and Schottky diode fabrication. Diode fabrication on textile fabric is a step forward towards the fabrication of electronic devices on non-conventional, economical, soft, light weight, flexible, wearable, washable, recyclable, reproducible and nontoxic substrate.