Fabrication of Zinc Oxide Transparent Thin-Film Transistor with ZrO₂Insulating Layer by Sol–Gel Method

Abstract

A thin-film transistor consisting of a ZnO active layer and a ZrO2 insulating layer was fabricated on a tin-doped indium oxide sputtered glass substrate as well as on a SiO2/Si wafer. The ZnO and ZrO2 layers were deposited by a sol–gel, dip-coating procedure. The resultant ZrO2 layer was about 150 nm thick and the ZnO layer 70 nm thick. The ZnO layer consisted of a single-grain thickness while the ZrO2 layer consisted of about 10 nm grains and was rather porous. The multilayered film consisting of ZnO/ZrO2/ITO/glass was transparent with 60–85% transmittance in the visible region and exhibited characteristics of a field-effect transistor. The multilayered film of the ZnO/ZrO2/SiO2/Si wafer was also examined and the behavior of the thin-film transistor was confirmed. The ZrO2 layer deposited on the SiO2/Si wafer minimized leakage through the insulating layer.

Structured catalyst of Pd/ZnO on sintered metal fibers for 2-methyl-3-butyn-2-ol selective hydrogenation

“…This high adherence may be attributed to the formation of a thin layer of mixed oxides between FeCrAl alloy [61] or ZnFe 2 O 4 [62]. Oxide layer formation also has been reported for ZnO-coated ZrO 2 [52] and SiO 2 [55].…”

“…ZnO film was prepared by the sol-gel method [52] using zinc acetate dihydrate (0.3 M in isopropanol) and solubility enhancement additives monoethanolamine (MEA) and acetoin (AIN) at a molar ratio of MEA:AIN:Zn = 1:0.5:1. The additives were mixed in a solvent before the addition of zinc acetate with the help of ultrasound, the sol was a reddish-brown color due to the reaction between MEA and AIN, yielding imine HO-CH(CH 3 )-C(CH 3 )=N-C 2 H 4 -OH [53].…”

Low-Temperature Growth of Zinc Oxide Films from Zinc Acetate Solution Using Plasma-Assisted Mist Chemical Vapor Deposition

“…Zinc oxide (ZnO) is a promising candidate for optical and electrical devices, such as ultraviolet emitters, detectors, laser diodes, transparent conducting electrodes, heterojunction transistors, thin film transistors and sensors [1][2][3][4][5][6][7][8][9]. Particularly, ZnO also is desired as transparent conducting film for next-generation devices including flexible electronics or electronics on polymers.…”

Effect of substrate bias on crystal structure and thermal stability of sputter-deposited ZnO films

“…Zinc oxide (ZnO) is an attractive material for applying to thinfilm transistors (TFTs) [1][2][3][4][5][6][7][8][9]. Various deposition techniques for ZnO films, such as rf and dc magnetron sputtering, chemical vapor deposition (CVD), ion plating (IP), pulsed laser deposition (PLD), and atomic layer deposition (ALD), have been reported.…”