Faceted Growth of SiC Bulk Crystals

Abstract

In this paper, we suggest a model of facet formation during bulk SiC growth by Physical Vapor Transport (PVT). The model considers the step-flow growth, with the step density dependent on the local orientation of the crystallization front with respect to the close-packed crystal planes. The growth kinetics employs the Burton-Cabrera-Frank approach extended to binary compounds and a multi-component vapor. Being implemented into a 2D simulator, the model is applied to analysis of faceting in free-spreading bulk SiC growth. The computations predict the crystal shapes very similar to those observed experimentally. The faceting influence on the overall crystal growth rate is discussed.

SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design

“…The software tool is found to be a useful approach for prior examination of the effects of growth system design and process parameters modification on the properties of the grown SiC bulk crystal. The software is PC-compatible with computing time in the range of a few hours [4][5].…”

Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results

“…Therefore in the past, numerical modeling has been utilized extensively for hot zone engineering and a better understanding of the complex dynamics during the PVT growth of SiC. [5][6][7][8][9][10][11][12][13][14][15] One major obstacle in the accurate modeling of the PVT growth process is the lack of precise material data at temperatures well above 2000°C of the applied carbon-based thermal isolations and crucible parts, as well as the SiC powder source. In addition, the material's inhomogeneities of the applied parts themselves may be critical.…”

“…However, acquiring in situ data from the inside of the crucible is difficult due to the high process temperatures. Therefore in the past, numerical modeling has been utilized extensively for hot zone engineering and a better understanding of the complex dynamics during the PVT growth of SiC . One major obstacle in the accurate modeling of the PVT growth process is the lack of precise material data at temperatures well above 2000 °C of the applied carbon‐based thermal isolations and crucible parts, as well as the SiC powder source.…”