Facile synthesis and photoluminescence of ZnSe nanowires

Study on Raman spectra of zinc selenide nanopowders synthesized by hydrothermal method

“…In recent years, nanostructured zinc selenide (ZnSe) as a direct wide-band gap II-VI group semiconductor material has gained considerable attention because it has a band gap energy of 2.8-2.99 eV at room temperature [1,2] and unique properties depending on different structures [3][4][5][6]. For example, the hollow ZnSe microspheres constructed from ZnSe nanoparticles with zincblende structure via Ostwald ripening show a strong near-band emission at 479 nm [3], but the ZnSe nanowires synthesized by thermal vaporation method displays a strong emission at 629 nm [4] and the ZnSe-Ag 2 Se nanocomposites via the high-temperature reflux route display a strong green emission at 550 nm due to Ag doping in the ZnSe nanoparticles [5].…”

“…For example, the hollow ZnSe microspheres constructed from ZnSe nanoparticles with zincblende structure via Ostwald ripening show a strong near-band emission at 479 nm [3], but the ZnSe nanowires synthesized by thermal vaporation method displays a strong emission at 629 nm [4] and the ZnSe-Ag 2 Se nanocomposites via the high-temperature reflux route display a strong green emission at 550 nm due to Ag doping in the ZnSe nanoparticles [5]. In addition, the ZnSe nanowires coated with TiO 2 by sputtering can significantly enhance the photoluminescence intensity in which the emission band is at about 630 nm due to increases in the concentrations of deep levels [6].…”

Bandgap engineering by substitution of S by Se in nanostructured ZnS1−xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications

“…Earlier, thin films of ZnS 1−x Se x have been prepared using molecular beam epitaxy [10,11], atomic layer epitaxy [12], high pressure sputtering [13], metal organic vapor epitaxy [14,15], metal organic chemical vapor deposition (MOCVD) [16], laser ablation [17], close space evaporation [6], spray pyrolysis [18], epitaxial growth [19], thermal evaporation [20], Successive Ionic Layer Adsorption and Reaction (SILLAR) [21], and soft chemical route technique [22][23][24], etc. ZnSe nanowires were synthesized by Sublimation Sandwich method (SSM) [25] and facile thermal vaporation method [26], Theoretical studies have also been carried out, wherein, Yu et al [27] performed ab initio calculations of the structural, dielectric and lattice properties of ZnX (X = O, S, Se and Te). Among the galore of thin film deposition techniques, except soft chemical route, involve the use of either sophisticated instruments and/or toxic gases such as H 2 S and/or H 2 Se as precursors.…”

Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au–Sb structure fabricated using SILAR method as a function of temperature

“…Since ZnSe is a valuable candidate in optoelectronic devices such as laser diodes, light-emitting diodes and photo detectors, there are currently a vast number of reports of experimental studies on ZnSe thin films [3][4][5][6][7][8][9][10]. Though a number of methods have been employed to synthesize ZnSe thin films [5], low luminescence efficiency caused by surface states is still a common problem for these films.…”