Factors affecting the long-term stability of Cu/Al ball bonds subjected to standard and extended high temperature storage

Vath, Charles J.; Gunasekaran, M.; Malliah, Ramkumar

doi:10.1016/j.microrel.2010.06.015

Cited by 18 publications

(4 citation statements)

References 6 publications

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“…This was because of the effect of high temperature annealing of the wire. 13 However, the wire pull break mode for both wires was break-at-neck for all the aging read points. The wire pull values have far exceeded the minimum requirement of 3·5 g. No ball lift or metal lift was observed.…”

Section: Ball Shear and Wire Pull Strengthmentioning

confidence: 92%

“…The shear strength increased more than 30% after subjected to isothermal aging at 175°C for 336 hours, but subsequently remained unchanged up till 1008 hours, similar trend to the previous studies performed on Cu wire bonding. 13,14 The initial shear mode for both bare Cu and insulated Cu was through a Al bond pad. However, as the isothermal aging hours increased, the shear mode was through Cu ball bond.…”

Section: Ball Shear and Wire Pull Strengthmentioning

confidence: 99%

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Characterisation of insulated Cu wire ball bonding

Leong

Yap

Khan³

et al. 2014

Materials Research Innovations

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Insulated Cu wire technology offers potential solutions for fine and ultra-fine pitch wire bonding as the insulator coating on the bare wire prevents wires shorting problem. Most previous works focused on insulated wire stitch bonding. This paper presents a comparison study between insulated Cu and bare Cu wire ball-bonding process characterisation in the standpoints of free air ball formation, Al splash, hardness, ball bond strength and intermetallic growth at the bond interface study. Spherical and clean free air ball was formed using lower electric flame off energy compared to bare Cu wire. The study shows that insulated Cu bonding demonstrated comparable equivalent ball bond strength to bare Cu wire bonding at T 0 and even after subjected to isothermal aging 175°C up to 1008 hours. Intermetallic formation was uniform at the bond interface for both wires. Insulated Cu wire demonstrates good bondability and reliability performance, suitable for fine pitch wire bonding in large-scale integration applications.

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Section: Ball Shear and Wire Pull Strengthmentioning

confidence: 92%

Section: Ball Shear and Wire Pull Strengthmentioning

confidence: 99%

Characterisation of insulated Cu wire ball bonding

Leong

Yap

Khan³

et al. 2014

Materials Research Innovations

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“…Copper bond wires can easily react with chemicals in a high temperature environment [8]. The plasma generates atomic radicals which is even more reactive.…”

Section: Preventing Damage On the Copper Bond Wiresmentioning

confidence: 99%

Process control in plasma decapsulation: Preventing damage to the copper wire bonds & controlled removal of Si3N4 passivation layer

Tang

Schelen

Beenakker

2012

2012 13th International Conference on Electronic Packaging Technology &Amp; High Density Packaging

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Semiconductor packages with 23 um copper bond wires are decapsulated by an atmospheric pressure Microwave Induced Plasma (MIP). Potential damage to the copper bond wires due to fluorine or oxygen radicals in the plasma is investigated. Parameters like CF4 amount, input power level, and 02 addition that may influence the Si3N4 passivation etching rate are evaluated. Theory behind the changes in Si containing material etching rate due to processing parameter variation is proposed based on the dissociation of CF4 gas in the plasma. SOT 23 packages are decapsulated in 6 minutes by the high radical flux plasma without damage. Real-time imaging of the plasma etching process made controlled removal of the molding compound and the subsequent Si3N4 passivation layer possible. Comparison with acid decapsulation is made and methods to prevent damage on internal components in a semiconductor package during plasma decapsulation are proposed.

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“…Gold-bonding wires have been dominant for a long time in the past, but in recent years, with the continuous rise of gold prices, it is urgent to find an alternative bonding wire with a lower cost. Copper (Cu) wire is becoming a standard wire-bonding material to replace gold wire in the semiconductor industry [ 1 , 2 , 3 , 4 ], especially in nanoelectronic packaging, because of its low price, excellent electrical and thermal conductivity, good strength and toughness, short heat-affected zone, and low necking failure rate [ 5 , 6 , 7 , 8 , 9 ].…”

Section: Introductionmentioning

confidence: 99%

Research Progress of Palladium-Plated Copper Bonding Wire in Microelectronic Packaging

Zhang,

Guo,

Cao

et al. 2023

Micromachines

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Wire-bonding technology is the most commonly used chip interconnection technology in microelectronic packaging. Metal bonding wire is the key material for wire bonding and plays an important role in the reliability of electronic devices. In recent years, palladium-plated copper (PdCu) bonding wire has been widely used because of its low cost, good electrical and thermal conductivity, the fact that it is not easy to oxidize, and its high reliability. Therefore, it is necessary to review its research progress. In this paper, the preparation and application of palladium-plated copper bonding wire are reviewed. Firstly, the preparation methods of electroplating, electroless plating, and direct plating are introduced. Secondly, the factors affecting the distribution of Pd in free air balls and bonding interfaces, the effect of Pd on the formation and growth of intermetallic compounds in PdCu wire, stitch bond, and reliability of PdCu wire are summarized and analyzed in the application process. Finally, its development prospect is prospected. Hopefully, this review can help readers to have a comprehensive understanding of the preparation and application of palladium-plated copper bonding wires, and can accelerate the promotion of its application in more fields in the future.

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Factors affecting the long-term stability of Cu/Al ball bonds subjected to standard and extended high temperature storage

Cited by 18 publications

References 6 publications

Characterisation of insulated Cu wire ball bonding

Characterisation of insulated Cu wire ball bonding

Process control in plasma decapsulation: Preventing damage to the copper wire bonds & controlled removal of Si3N4 passivation layer

Research Progress of Palladium-Plated Copper Bonding Wire in Microelectronic Packaging

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Factors affecting the long-term stability of Cu/Al ball bonds subjected to standard and extended high temperature storage

Cited by 18 publications

References 6 publications

Characterisation of insulated Cu wire ball bonding

Characterisation of insulated Cu wire ball bonding

Process control in plasma decapsulation: Preventing damage to the copper wire bonds &amp; controlled removal of Si3N4 passivation layer

Research Progress of Palladium-Plated Copper Bonding Wire in Microelectronic Packaging

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Product

Resources

About

Process control in plasma decapsulation: Preventing damage to the copper wire bonds & controlled removal of Si3N4 passivation layer