Failure mechanisms and fault classes for CMOS-compatible microelectromechanical systems

Abstract

Silicon-compatible micromachining provides a low cost monolithic solution for the integration of microelectromechanical systems (MEMS). In the last years, C M P (the French MultiProject Wafer Service) has made available technological solutions f o r the fabrication of CMOS-compatible MEMS. Numerous monolithic devices have been fabricated using this service. The inspection of failed devices has allowed the identification of the most typical failure mechanisms and design errors f o r this type of MEMS. This valuable in-formation, together with a detailed analysis of the fabrication processes, is used in this paper to provide a classification of faults in silicon-compatible MEMS which can later be used for fault simulation and testing.

Analysis of Fault Injection in Implantable Capacitive Blood-pressure Sensors

“…Among the failure mechanisms or defects which can appear during fabrication, defects occurring during the CMOS process can be distinguished from defects occurring during micromachining (Castillejo et al, 1998); (Mir et al, 2000); (Huang et al, 2012). Microelectronic and micromechanical components are created on the wafer during the CMOS process by means of a set of semiconductor, conductor and dielectric layers.…”

A fault simulation methodology for MEMS

“…The sort of defects that can occur in these kind of structures can be determined from observations of failed devices. In [17] the most typical failure mechanisms in a bulk micromachining process are identified for each technology step together with the faults & deviating parameters caused by those mechanisms.…”

A fault simulation methodology for MEMS

“…Layout of the sensor/actuator The sort of defects that can occur in these kind of structures can be determined from observations of failed devices. In [17] the most typical failure mechanisms in a bulk micromachining process are identified for each technology step together with the faults & deviating parameters caused by those mechanisms.…”