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Glaser, E. R.; Shanabrook, B. V.; Hawkins, R. L.; Beard, W. T.; Mercy, J.-M.; McCombe, B. D.; Musser, D.

doi:10.1103/physrevb.36.8185

Cited by 46 publications

(8 citation statements)

References 11 publications

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“…Glaser et ai [6] and Mercy et al [7] found that adding donors to the GaAlAs barriers introduced two additional lines into the magneto-optical spectrum of GaAs quantum wells of -200 A width. They concluded that neither of these lines originated from D ~ transitions.…”

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confidence: 99%

Definitive identification ofD−centers in GaAs quantum wells by tilt-induced line splitting in a magnetic field

Waldman

et al. 1992

Phys. Rev. Lett.

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D ~ centers have been unambiguously identified in GaAs/(Ga,Al)As quantum wells by analysis of the dependence of the observed photoconductivity spectrum on the applied magnetic field and sample orientation. Theoretical investigations show that in magnetic fields of interest the D ~ transitions do not involve photoionization of the centers as has been previously supposed but proceed from the ground state to discrete p-\-or p + i-like D~ levels, which lie above the N-0 and 7V = 1 Landau-level energies, respectively. Tilting the sample leads to a predicted anticrossing of discrete po~ and p-H-like D~ levels. Excellent agreement with experiment is obtained without any adjustable parameters.

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mentioning

confidence: 99%

Definitive identification ofD−centers in GaAs quantum wells by tilt-induced line splitting in a magnetic field

Waldman

et al. 1992

Phys. Rev. Lett.

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“…There appear two additional resonances (ICR(b)) on the lower field side whose origin is not clear. Huant et al 3,5,6,44 observed in GaAs/AlGaAs quantum wells magneto-optical transitions ascribed to donors in Al-GaAs barriers 3,5,44,45 . According to calculations 44 and observations reported in 45 the energies of transitions for MD in barriers are slightly higher than the cyclotron resonance.…”

Section: Comparison Of Experiments With Theorymentioning

confidence: 99%

Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at megagauss magnetic fields

et al. 2017

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Landau levels and shallow donor states in multiple GaAs/AlGaAs quantum wells (MQWs) are investigated by means of the cyclotron resonance at mega-gauss magnetic fields. Measurements of magneto-optical transitions were performed in pulsed fields up to 140 T and temperatures from 6 to 300 K. The 14 × 14 P•p band model for GaAs is used to interpret free-electron transitions in a magnetic field. Temperature behavior of the observed resonant structure indicates, in addition to the free-electron Landau states, contributions of magneto-donor states in the GaAs wells and possibly in the AlGaAs barriers. The magneto-donor energies are calculated using a variational procedure suitable for high magnetic fields and accounting for conduction band nonparabolicity in GaAs. It is shown that the above states, including their spin splitting, allow one to interpret the observed magneto-optical transitions in MQWs in the middle infrared region. Our experimental and theoretical results at very high magnetic fields are consistent with the picture used previously for GaAs/AlGaAs MQWs at lower magnetic fields.

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“…The reduced non-ionized donors in barriers cause this transitions as it have been shown in Refs. [3][4][5]39 in the region of smaller magnetic fields. In the case of the MD transitions in the AlGaAs barriers the spin splitting is smaller and is outside experimental resolution of 1.5 T. In Fig.…”

Section: Comparison Of Experiments With Theorymentioning

confidence: 99%

Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at mega-gauss magnetic fields

Zybert

Marchweka

Sheregii

et al. 2017

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Landau levels and shallow donor states in multiple GaAs/AlGaAs quantum wells (MQWs) are investigated by means of the cyclotron resonance at mega-gauss magnetic fields. Measurements of magneto-optical transitions were performed in pulsed fields up to 140 T and temperatures from 6 to 300 K. The 14 × 14 P·p band model for GaAs is used to interpret free-electron transitions in a magnetic field. Temperature behavior of the observed resonant structure indicates, in addition to the free-electron Landau states, contributions of magneto-donor states in the GaAs wells and possibly in the AlGaAs barriers. The magneto-donor energies are calculated using a variational procedure suitable for high magnetic fields and accounting for conduction band nonparabolicity in GaAs. It is shown that the above states, including their spin splitting, allow one to interpret the observed magneto-optical transitions in MQWs in the middle infrared region. Our experimental and theoretical results at very high magnetic fields are consistent with the picture used previously for GaAs/AlGaAs MQWs at lower magnetic fields.

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Far-infrared magnetoabsorption study of weakly bound electrons inGaAs/AlxGa1−x

Cited by 46 publications

References 11 publications

Definitive identification ofD−centers in GaAs quantum wells by tilt-induced line splitting in a magnetic field

Definitive identification ofD−centers in GaAs quantum wells by tilt-induced line splitting in a magnetic field

Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at megagauss magnetic fields

Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at mega-gauss magnetic fields

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