Far-infrared photoconductivity in self-organized InAs quantum dots

Abstract

We report far-infrared photoconductivity in self-organized InAs/GaAs quantum dots grown by molecular beam epitaxy. Through use of a Fourier transform infrared spectrometer, a photoconductivity signal peaked at 17 m is observed from a n-in detector structure with doped InAs quantum dots in the intrinsic region. Comparison of photoluminescence and band-to-band photocurrent absorption spectra suggests the far-infrared response is due to intersubband transitions in the quantum dots.

Intraband transitions in quantum dot–superlattice heterostructures

“…Depending on the dot potential shape and the doping level, photodetection can even be extended into the region below 100 meV 21,22 . Furthermore the spectral response of such devices can be controlled through the applied bias allowing multiwavelength detection 23 .…”

Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

“…Semiconductor quantum dot ͑QD͒ lasers with low threshold currents and high gain, 1,2 and QD infrared photodetectors 3 capable of incident photon absorption are showing successful implementations of the unique optical properties of self-forming semiconductor QDs. Future device applications include the use of coupled QDs as the basic structures in the fabrication of cellular automata in novel computing architectures 4 and frequency domain optical storage 5 based on self-assembled QDs.…”

Ferromagnetism in One Layer of Self-organized InMnAs Quantum Dots

“…The reason why this reduction in the intensity of emission occurs with increasing growth temperature is due to the increased thermal energy of carriers. The peak B centered at 1.49 eV comes from the InAs wetting layer which is the reported value for the two-dimensional InAs wetting layer of 1.4-1.5 eV [25]. The peak B is completely quenched out in the InMnAs dot grown at 285°C.…”