Far-infrared spectroscopy of the zinc acceptor in indium phosphide

Causley, R.L; Lewis, R. A.

doi:10.1016/s0921-4526(01)00448-3

Cited by 8 publications

(6 citation statements)

References 21 publications

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“…This established, it is necessary to discuss the possible reasons for this effect. A similar situation occurred with our four-point probe measurements [11] (8) and (9). and possible reasons for the observed discrepancy were fully discussed.…”

Section: Discussionsupporting

confidence: 87%

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Hall Effect measurements on p-n-p InP structures

Sequeira

Santos

2008

Braz. J. Phys.

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The electrical properties of p-type layers of indium phosphide (InP), formed by the diffusion of zinc into n-type material, are studied by Hall Effect measurements. A wide range of diffusion conditions are used and both homogeneously doped specimens and those containing a zinc atom concentration gradient are produced. A non-correspondence of atom and carrier concentrations is indicated, confirming previous four point resistivity studies. Carrier profiles are achieved by both serial sectioning and multiple specimen techniques. Contacting procedures are developed from which plots of carrier mobility versus carrier concentration, in the range 5 x 10 17 -5 x 10 19 cm −3 , are produced for p-n-p InP. In the main, present results showed good reproducibility and conformed to the "rules" of the Van der Pauw technique.

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Section: Discussionsupporting

confidence: 87%

“…An approximate "one to one" correlation between atom and carrier concentrations has been reported by many authors [1][2][3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Hall Effect measurements on p-n-p InP structures

Sequeira

Santos

2008

Braz. J. Phys.

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“…In work to 7 T in a splitcoil solenoid using polarized radiation, four components were resolved for E _L B and two components for E || B, and the g-factors of the ground and first excited state were deduced. 7 Extension to 17.5 T revealed only three E _L B components, the intensity of the lower-energy components decreasing with magnetic field. 8 This trend, due to magnetic depopulation, continues as expected in the present data.…”

Section: Resultsmentioning

confidence: 91%

MAGNETOSPECTROSCOPY OF Zn-DOPED InP TO 30 T

Lewis

Wang

2004

Int. J. Mod. Phys. B

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“…36 At higher fields it reemerges, leading to a reassignment of the unperturbed energy on the basis of magnetospectroscopy. 34 Even so, the small number of observed components was insufficient to allow the determination of the g factors of the 2⌫ 8 − state.…”

Section: Resultsmentioning

confidence: 99%

Magneto-optical far-infrared absorption spectroscopy of the hole states of indium phosphide

Lewis

Wang

2005

Phys. Rev. B

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Far-infrared absorption spectroscopy in magnetic fields of up to 30 T of the zinc acceptor impurity in indium phosphide has revealed for the first time a series of free-hole transitions ͑Landau-related series͒ in addition to the familiar bound-hole transitions ͑Lyman series͒ as well as hitherto unobserved phonon replicas of both series. Analysis of these data permits the simultaneous direct experimental determination of ͑i͒ the hole effective mass, ͑ii͒ the species-specific binding energy of the acceptor impurity, ͑iii͒ the absolute energy levels of the acceptor excited states of both odd and even parity, ͑iv͒ more reliable, and in some cases the only, g factors for acceptor states, through relaxation of the selection rules for phonon replicas, and ͑v͒ the LO phonon energy. The method is applicable to other semiconductors and may lead to the reappraisal of their physical parameters.

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Far-infrared spectroscopy of the zinc acceptor in indium phosphide

Cited by 8 publications

References 21 publications

Hall Effect measurements on p-n-p InP structures

Hall Effect measurements on p-n-p InP structures

MAGNETOSPECTROSCOPY OF Zn-DOPED InP TO 30 T

Magneto-optical far-infrared absorption spectroscopy of the hole states of indium phosphide

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