Faraday Rotation, Spectral Emittance, and Hall Effect of Gallium Antimonide

Abstract

Based upon the two-band model, a combined analysis of the experimental data of GaSb obtained from Faraday rotation, spectral emittance, and Hall effect measurements is discussed.

Conduction bands of GaxIn1–x Sb alloys

“…4 for GaSb itself and alloys close to it should be reasonably accurate. The energy separation between the (000) and (1 11) minima for GaSb given here is in good agreement with data obtained by other methods (Liang et al 1968; van Tongerloo and Woolley 1969). The only previous data for the higher conduction bands of the alloys are values given for the (111) minima by Kudman and Seidel (1967), from Hall measurements on four different alloy samples.…”

“…the fundamental gap is a direct one and hence the values of the optical-band gap and its temperature coefficient determined by standard optical-absorption work (Woolley and Evans 1961) should give information directly about this energy gap. However, for electrical data, the analysis is complicated by the fact that, at the GaSb end of the compositioil range, electrons in other conduction-band minima, particularly the (1 11) minima, may take part in conduction processes even at relatively low temperatures, since the room-temperature energy separation of the (000) and (1 1 1) conduction-band minima for GaSb is 0.075 eV (Liang et al 1968; van Tongertemperature Hall data in terms of a simple twoband (one conduction, one valence band) form (Woolley and Gillett 1960) would give satisfactory values for the fundamental gap for the approximate composition range 0 < x < 0.5, but not for higher values of x. High-temperature Hall data on a limited number of alloy samples have been analyzed by Kudman and Seidel(1967) assuming contributions from the two conduction bands (000) and (1 11) only. However, it has been shown (Woolley 1966) that in the case of GaSb, the high-temperature Hall data can be explained only in terms of contributions from three conduction bands, i.e.…”

Electron effective mass values in GaAsxSb1−x alloys

“…0 1~ (19) and that m,, = m,,. m,, has been assumed to be given by the simple Kane equation of [14]. Values of n7,,' "1n have been calculated from [15] and are shown in Fig.…”

“…For the case of Faraday rotation, the value of 8 for two bands is given by (14) where m, , :" nml,(3K,/(K, + 2))'12 so that the expression for 8 in [2] must be modified by the term…”

Magnetooptic Faraday effect in semiconductors

“…Эффект Фарадея на свободных носителях применялся для анализа тензора обратной эффективной массы в карбиде кремния 90 , теллуре 9 \ сурьмянистом галлии 92 , для определения эффективной массы в различ-ных полупроводниках 9; \ а также для изучения распределения носителей по объему кристалла 94 . Влияние сильного («греющего») электрического поля на вращение свободными электронами исследовалось в работах [34][35][36][37][38]95 IV.…”