Measurements have been made of the high-temperature Hall coefficient, electrical conductivity, and thermoelectric power in polycrystalline n-type samples of InAs,Sbl-, alloys of extrinsic carrier concentration -10"/cm3.From the Hall-coefficient data, values of the extrapolated absolute-zero band gap E,, have been determined over the whole alloy range, the thern~oelectric power results being used to provide a correction factor to allow for effects of degeneracy. I n all cases this correction was found to be very small. The resultant values of E D , for the alloys are somewhat lower than those obtained previously fro111 optical absorption data and show a nlini~num of 0.

No abstract

Measurements of Hall coefficient and electrical conductivity have been made on alloys of the system Ga,In, -,Sb over a range of temperature from 100 "K up to 950 O K or to 20' below the solidus temperature of the particular specimen, whichever was the lower. These data have then been analyzed in terms of equations involving three conduction and two valence bands, the important unknown parameters in the equations being determined by a trial and error fitting technique. The results give the variation of the energy separation from the valence band of the (1 11) and (100) conduction band minima, as well as the main (000) band gap as a function of the con~position and temperature. Also determined from the analysis are the (000) electron mobilities, which are found to vary linearly with composition, indicating that alloy scattering has negligible effect on the mobility values.

Measurements of Hall coefficient and electrical conductivity have been made on alloys of the systems GaxIn1−xAs and InAsxSb1−xover a range of temperature from 200 up to 950 °K or to 20° below the solidus temperature of the particular specimen, whichever was lower. These data have then been analyzed in terms of equations involving all the occupied conduction and valence bands in the manner described previously by Coderre and Woolley. The results give the variation of the energy separation from the valence band of the (000) conduction-band minimum as a function of the composition and temperature for both alloy systems. For a certain range of x in the InAsxSb1−x alloys, a transition to the gray-tin band structure is observed at high temperatures.

No abstract