Conduction bands of Ga_xIn_1−xAs and InAs_xSb_1−xalloys

Abstract

Measurements of Hall coefficient and electrical conductivity have been made on alloys of the systems GaxIn1−xAs and InAsxSb1−xover a range of temperature from 200 up to 950 °K or to 20° below the solidus temperature of the particular specimen, whichever was lower. These data have then been analyzed in terms of equations involving all the occupied conduction and valence bands in the manner described previously by Coderre and Woolley. The results give the variation of the energy separation from the valence band of the (000) conduction-band minimum as a function of the composition and temperature for both alloy systems. For a certain range of x in the InAsxSb1−x alloys, a transition to the gray-tin band structure is observed at high temperatures.

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“…The bandgap energy can then be estimated from the slope of ln(I R ) against inverse temperature. From the slope of the curve near room temperature (and assuming that the diffusion current dominates), we derived a value for the bandgap energy of 0.267 eV, which is in good agreement with that calculated for our InAs 0.89 Sb 0.11 ternary alloy at room temperature [21]. At lower temperatures the generation-recombination (G-R) current mechanism takes over as shown in the figure by the second dotted line.…”

A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector*

“…[15,16] Based on the InAsSb material system, the corresponding wavelength of the photodetectors can cover short wavelength infrared (SWIR) region and MWIR even long wavelength infrared (LWIR) regions. [17,18] Recently, it has been reported that the photo-excited carriers in a low-dimensional semiconductor material can be effectively extracted from a p-n junction by inserting quantum wells into the depletion region of a p-n junction, the response spectrum can be extended, quantum efficiency can increase and the absorption efficiency in the quantum wells (QWs) can be rather high, which can enhance the signal-to-noise ratio. [19][20][21][22] Based on those phenomena, researchers have fabricated three infrared interband transition quantum well detectors on different substrates, including GaAs-based InGaAs/GaAs QWs detectors, [23] InPbased InAs/InGaAs/InAlAs QWs detectors, [24] and GaSbbased lattice-matched GaSb/InAsSb QWs detectors.…”

Electronic Properties of AlxGa1?xAsySb1?y Alloys Lattice-Matched to InAs

“…In spite of the importance of the electronic properties of multicomponent alloy systems, and while many researchers have studied numerous III-V ternary alloys [6][7][8][9][10][11][12], only few studies have been reported for quaternary alloys [13][14][15]. Besides the experimental work on the alloys, there has been little theoretical effort because of the computational difficulties and complexities that arise in dealing with the disorder in the alloys.…”