Fast and accurate electro-thermal behavioral model of a commercial SiC 1200V, 80 m&amp;#x03A9; power MOSFET

Pushpakaran, Bejoy N.; Bayne, Stephen; Wang, Gangyao; Mookken, John

doi:10.1109/ppc.2015.7296918

Cited by 19 publications

(6 citation statements)

References 6 publications

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“…The Spice model presented in the first part and provided by the manufacturer is based on Enz-Krummenacher-Vittoz (EKV) method. This model has the ability to describe MOSFET behavior over weak, moderate and strong inversion regions with a single equation [13], [14], but it does not characterize the body diode contribution directly. The static and dynamic characterizations described previously make it clear that the body diode modeling cannot be done independently of the MOSFET channel.…”

Section: Towards Improved Modelsmentioning

confidence: 99%

Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant

Masson,

Cousineau,

Rouger

et al. 2023

2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

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In this paper, the 3 rd quadrant behavior of a 1.2 kV SiC MOSFET without additional anti-parallel diode is investigated. More specifically, the effect of the gate-source voltage on the reverse conduction is presented, and shows a strong dependency even for a gate voltage varying below the threshold voltage. The static characterization is compared to three other types of MOSFETs that present a stronger reverse current path due to their architectures. A dynamic characterization is also performed to describe the transition between the body-diode conduction and the channel reverse conduction within the 3 rd quadrant (a.k.a. synchronous rectification). Both static and dynamic behaviors are compared to the device's LTspice TM model and highlights the differences between experiment and simulation in 3 rd quadrant as the gate voltage below the threshold voltage is not taken into account in this model. Insights towards a more precise modeling for this operating region are discussed at the end of the article.

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Section: Towards Improved Modelsmentioning

confidence: 99%

Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant

Masson,

Cousineau,

Rouger

et al. 2023

2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

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“…According to [13,[32][33], the Enz-Krummenacher-Vittoz (EKV) model is able to predict MOSFET static behaviours all over the weak, moderate and strong inversion regions with a single expression. Compared with models in [10][11][12][13][14][15], its parameter extraction process is more straightforward. Here, we still use the improved EKV model proposed in [32,33] to describe M 1 .…”

Section: Static Characteristics Modelling Of Sic Mosfetmentioning

confidence: 99%

“…The three nonlinear interelectrode capacitances are meticulously modelled and the nonlinearity of the drain-to-source capacitance is studied in detail [11,12]. Customized formulas were used to model the gate-to-drain miller capacitance [13,14]. In most models [11,[13][14][15], only a junction capacitance of the SiC MOSFET body diode is used to model the drain-to-source capacitance C ds , which is prone to inaccuracy.…”

Section: Introductionmentioning

confidence: 99%

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Improved simulation modelling and its verification for SiC MOSFET

Yang

Wang

Ding

et al. 2022

IET Power Electronics

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Of crucial importance is to accurately simulate its switching characteristics for the application of SiC MOSFET. Due to the ultrafast switching capability, SiC MOSFET is dependent on interelectrode capacitances and extremely sensitive to parasitics. Therefore, accurate modelling of interelectrode capacitances and knowledge of parasitics are required. Here, an improved SiC MOSFET model driven by an empirical formula with three segments for the non-linear drain-to-gate capacitance in relationship with the drain-to-source voltage is developed. In this way, the capacitance fitting at the inflection point that has a great impact on the switching delay is much improved. By simple self-made high-voltage C-V measurement systems, the accuracy of the proposed formula is verified. More importantly, intruded parasitics by the commonly-used coaxial shunt current measurement loop is analysed in detail. The equivalent circuit of the current measurement loop is incorporated into the device simulation circuit to compensate measurement errors. In this way, the improved model can be more reliably verified and evaluated. A double pulse test is built to verify the proposed model. By comparison of simulation and experimental results, the proposed model works well at different voltage and current operating conditions and offers a reliable and accurate modelling approach.

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“…Although the manufacturing technology of SiC MOSFETS is quickly approaching its maturity, the circuit modelling, especially referring to reliability of high-voltage devices has not been studied in the past research works. Several electrical and electro-thermal models have been developed and implemented so far, based on simple behaviorally-based [2] or physically-based equations [3], [4]. A survey of the available models' features and their implementations is reported in [5].…”

Section: Introductionmentioning

confidence: 99%

A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs

Ceccarelli

Bahman

Iannuzzo

et al. 2017

2017 IEEE Applied Power Electronics Conference and Exposition (APEC)

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The purpose of this work is to propose a novel electrothermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT's structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer's data.

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Fast and accurate electro-thermal behavioral model of a commercial SiC 1200V, 80 mΩ power MOSFET

Cited by 19 publications

References 6 publications

Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant

Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant

Improved simulation modelling and its verification for SiC MOSFET

A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs

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