Fast and smooth etching of indium tin oxides in BCl3/Cl2 inductively coupled plasmas

Andagana, H. B.; Cao, X. A.

doi:10.1116/1.3280919

Cited by 9 publications

(5 citation statements)

References 17 publications

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“…Next, photolithography was performed with a 300 nm PECVD SiO 2 as a hard mask to define the mesa structure. The ITO CSL and p-GaN were etched by using inductively coupled plasma (ICP) etching with BCl 3 /Cl 2 = 12/12 SCCM for ITO [19][20][21] and BCl 3 /Cl 2 = 5/25 SCCM for p-GaN respectively. Subsequently, the device was dipped into 8% KOH solution at 80 • C to reduce the sidewall damage induced by the ICP process and remove the nanorods generated from ITO dry etching, and 50 nm thermal ALD Al 2 O 3 (trimethylaluminum (TMA) + H 2 O) layer was deposited at 300 • C to passivate the remaining sidewall dangling bonds [22].…”

Section: Device Fabricationmentioning

confidence: 99%

Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 μm

Liu

Feng

Zhang

et al. 2022

J. Phys. D: Appl. Phys.

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In this paper, the GaN-based green Micro-LEDs with various sizes (from 3 to 100 μm) were fabricated and electro-optically characterized. Atom layer deposition (ALD) passivation and potassium hydroxide (KOH) treatment were applied to eliminate the sidewall damage. The size dependence of Micro-LED was systematically analyzed with current-versus-voltage and current density-versus-voltage relationship. According to the favorable ideality factor results (<1.5), the optimized sidewall treatment was achieved when the device size shrank down to <10 μm. In addition, the EQE droop phenomenon, luminance and output power density characteristics were depicted up to the highest current density injection condition to date (120 kA/cm2), and 6 μm device exhibited an improved EQE performance with the peak EQE value of 16.59% at 20 A/cm2 and over 600k and 6M cd/cm2 at 1 and 10 A/cm2, indicating a greater brightness quality for over 3000 PPI multiple display application. Lastly, the blue shift of 6 μm device with elevating current density was observed in electroluminescence (EL) spectra and converted to CIE 1931 color space. The whole shifting track and color variation from 1 A/cm2 to 120 kA/cm2 were demonstrated by color coordinates.

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Section: Device Fabricationmentioning

confidence: 99%

Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 μm

Liu

Feng

Zhang

et al. 2022

J. Phys. D: Appl. Phys.

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“…24,25) For the patterning of nanoscale features, we usually use dry etching with chemically reactive plasmas. 5,26,27) For application to small-dimension device fabrication, we need highly selective etching of ITO=mask materials. In this study, we investigated the cyclic etching of ITO using hydrogen plasma followed by Ar plasma and developed a method to improve the etch rate selectivity for ITO over mask materials.…”

Section: Introductionmentioning

confidence: 99%

Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

Hirata¹,

Fukasawa²,

Nagahata³

et al. 2018

Jpn. J. Appl. Phys.

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The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO 2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO 2 , resulting in an almost infinite selectivity for ITO over SiO 2 and in improved profile controllability.

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“…Halogen-based species are generally used as source gases for the etching of conventional materials. [7][8][9][10][11] However, the halogen-containing reaction by-products of indium have boiling points of 700-800 °C, which cause difficulties during dry etching. 12) The other issue is the low etch selectivity to the photoresist mask on ITO pattern etching.…”

Section: Introductionmentioning

confidence: 99%

Effects of hydrogen-damaged layer on tin-doped indium oxide etching by H₂/Ar plasma

Hirata¹,

Fukasawa²,

Shigetoshi³

et al. 2017

Jpn. J. Appl. Phys.

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The etch rate of tin-doped indium oxide (or indium tin oxide, ITO) and the effects of a hydrogen-damaged layer caused by H 2 /Ar plasma were investigated using several surface analysis techniques. The ITO etch rate strongly depended on the H 2 /Ar flow rate ratio. The ITO was reduced by hydrogen injection and generated an In-rich (hydrogen-induced damage) layer on the surface. Because this In-rich layer had a higher sputtering yield, the hydrogen-damaged layer enhanced the ITO etch rate. Thus, the etching of ITO in H 2 /Ar plasma is determined by the balance between the formation of the In-rich damaged layer by H ion irradiation and the sputtering by Ar (relatively heavy inert gas) ions.

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Fast and smooth etching of indium tin oxides in BCl3/Cl2 inductively coupled plasmas

Cited by 9 publications

References 17 publications

Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 μm

Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 μm

Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

Effects of hydrogen-damaged layer on tin-doped indium oxide etching by H₂/Ar plasma

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Fast and smooth etching of indium tin oxides in BCl3/Cl2 inductively coupled plasmas

Cited by 9 publications

References 17 publications

Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 μm

Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 μm

Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

Effects of hydrogen-damaged layer on tin-doped indium oxide etching by H2/Ar plasma

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Effects of hydrogen-damaged layer on tin-doped indium oxide etching by H₂/Ar plasma